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    Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator

    Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator by Bera, L. K., Tham, W. H., Kajen, R. S., Dolmanan, S. B., Kumar, M. Krishna, Lin, Vivian Kaixin, Ang, Diing Shenp, Bhat, T. N., Yakovlev, N., Tripathy, Sudhiranjan

    Published 2014
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    Journal Article

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