Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis by Mandar S. Bhoir, Thomas Chiarella, Lars Ake Ragnarsson, Jerome Mitard, Valentina Terzeiva, Naoto Horiguchi, Nihar R. Mohapatra

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Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET by Soohyun Kim, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi, Jae Woo Lee

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A Pragmatic Model to Predict Future Device Aging by James Brown, Kean Hong Tok, Rui Gao, Zhigang Ji, Weidong Zhang, John S. Marsland, Thomas Chiarella, Jacopo Franco, Ben Kaczer, Dimitri Linten, Jian Fu Zhang

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Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs by Stanislav Tyaginov, Barry O’Sullivan, Adrian Chasin, Yaksh Rawal, Thomas Chiarella, Camila Toledo de Carvalho Cavalcante, Yosuke Kimura, Michiel Vandemaele, Romain Ritzenthaler, Jerome Mitard, Senthil Vadakupudhu Palayam, Jason Reifsnider, Ben Kaczer

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