Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs) by Jeong-S. Moon, Michael Fritze, Jonathan R. Ahlbin, Michael Bajura, Ivan S. Esqueda, Cory D. Cress, Travis J. Anderson

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Detecting defects that reduce breakdown voltage using machine learning and optical profilometry by James C. Gallagher, Michael A. Mastro, Alan G. Jacobs, Robert. J. Kaplar, Karl D. Hobart, Travis J. Anderson

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High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography by Nadeemullah A. Mahadik, Marko J. Tadjer, Peter L. Bonanno, Karl D. Hobart, Robert E. Stahlbush, Travis J. Anderson, Akito Kuramata

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Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices by Alan G. Jacobs, Boris N. Feigelson, Joseph A. Spencer, Marko J. Tadjer, Jennifer K. Hite, Karl D. Hobart, Travis J. Anderson

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Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques by James C. Gallagher, Mona A. Ebrish, Matthew A. Porter, Alan G. Jacobs, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Travis J. Anderson

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Using machine learning with optical profilometry for GaN wafer screening by James C. Gallagher, Michael A. Mastro, Mona A. Ebrish, Alan G. Jacobs, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Travis J. Anderson

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Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination by Mona A. Ebrish, Matthew A. Porter, Alan G. Jacobs, James C. Gallagher, Robert J. Kaplar, Brendan P. Gunning, Karl D. Hobart, Travis J. Anderson

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A discussion on various experimental methods of impact ionization coefficient measurement in GaN by Dong Ji, Ke Zeng, Zhengliang Bian, Bhawani Shankar, Brendan P. Gunning, Andrew Binder, Jeramy R. Dickerson, Ozgur Aktas, Travis J. Anderson, Robert J. Kaplar, Srabanti Chowdhury

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