InGaAs/InAs heterojunction vertical nanowire tunnel FETs fabricated by a top-down approach by Zhao, Xin, Vardi, Alon, del Alamo, Jesus A.

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Sub-Thermal Subthreshold Characteristics in Top–Down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs by Zhao, Xin, Vardi, Alon, del Alamo, Jesus A

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Excess Off-State Current in InGaAs FinFETs by Zhao, Xin, Vardi, Alon, del Alamo, Jesus A

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A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor by Yin, Zongyou, Tordjman, Moshe, Vardi, Alon, Kalish, Rafi, del Alamo, Jesus A

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Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond by Yin, Zongyou, Tordjman, Moshe, Lee, Youngtack, Vardi, Alon, Kalish, Rafi, del Alamo, Jesús A

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Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts by Zhao, Xin, Heidelberger, Christopher, Fitzgerald, Eugene A, Lu, Wenjie, Vardi, Alon, del Alamo, Jesus A

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Nanometer-Scale III-V MOSFETs by Del Alamo, Jesus A, Antoniadis, Dimitri A, Lin, Jianqiang, Lu, Wenjie, Vardi, Alon, Zhao, Xin

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Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation by Vardi, Alon, Kong, Lisa (Lisa Fanzhen), Lu, Wenjie, Cai, Xiaowei, Zhao, Xin, Grajal de la Fuente, Jesus, del Alamo, Jesus A

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Scaling Effects on Single-Event Transients in InGaAs FinFETs by Gong, Huiqi, Ni, Kai, Zhang, En Xia, Sternberg, Andrew L., Kozub, John A., Ryder, Kaitlyn L., Keller, Ryan F., Ryder, Landen D., Weiss, Sharon M., Weller, Robert A., Alles, Michael L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Vardi, Alon, del Alamo, Jesus A

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