Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage 著者: Gao, Bin, Yu, Hongyu, Kang, J. F., Chen, B., Liu, L. F., Liu, X. Y., Wang, Z. R., Yu, B.

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Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM 著者: Shubhakar, K., Pey, Kin Leong, Bosman, Michel, Thamankar, R., Kushvaha, S. S., Loke, Y. C., Wang, Z. R., Raghavan, Nagarajan, Wu, X., O'Shea, S. J.

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Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection 著者: Wei, J., Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Yu, Hongyu

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A self-rectifying HfOx-based unipolar RRAM with NiSi electrode 著者: Tran, Xuan Anh, Gao, Bin, Yu, Hongyu, Zhu, W. G., Kang, J. F., Liu, W. J., Fang, Z., Wang, Z. R., Yeo, Y. C., Nguyen, B. Y., Li, M. F.

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Positive bias-induced Vth instability in graphene field effect transistors 著者: Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Ng, Geok Ing, Yu, Hongyu

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