SURFACE SPECTROSCOPIC AND MOLECULAR-BEAM STUDIES OF THE REACTIONS OF TRIMETHYLALUMINUM ON SI(100) by Wee, A, Jackman, R, Price, R, Foord, J

Surface spectroscopic and molecular beam studies of the reactions of trimethylaluminium on Si(100) by Wee, A, Jackman, R, Price, R, Foord, J

Superstructure formation and faceting in the Cu(210)-O system studied by scanning tunneling microscopy by Wee, A, Foord, J, Egdell, R, Pethica, J

MECHANISTIC ASPECTS RELATING TO THE GROWTH OF GAXIN1-XAS BY CBE by French, C, Wee, A, Foord, J, Davies, G

Superstructure formation and faceting in the Cu(210)-O system studied by scanning tunneling microscopy by Wee, A, Foord, J, Egdell, R, Pethica, J

DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE by Kingsley, C, Whitaker, T, Wee, A, Jackman, R, Foord, J

THE ADSORPTION AND DECOMPOSITION OF GALLANE ADDUCTS ON GAAS (100) by Foord, J, Wee, A, Singh, N, Whitaker, T, Ohare, D

ALUMINUM FILM GROWTH BY CHEMICAL VAPOR-DEPOSITION OF AIH3(NME3)2 by Wee, A, Murrell, A, Singh, N, Ohare, D, Foord, J

SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY by Foord, J, Singh, N, Wee, A, French, C, Fitzgerald, E

SURFACE DECOMPOSITION MECHANISM OF THE NOVEL PRECURSOR BISTRIMETHYLAMINE ALUMINUM-HYDRIDE ON GAAS(100) by Wee, A, Murrell, A, Singh, N, Ohare, D, Foord, J

Bromine etching of mesoscopic structures on Cu(210): a scanning tunneling microscopy study by Wee, A, Fishlock, T, Dixon, R, Foord, J, Egdell, R, Pethica, J

STUDIES OF THE SURFACE REACTIVITY OF NOVEL HYDRIDE ADDUCT PRECURSORS FOR CBE GROWTH OF III-V COMPOUNDS by Foord, J, Murrell, A, Ohare, D, Singh, N, Wee, A, Whitaker, T

Scanning tunnelling microscopy study of palladium on stepped Cu(210) surfaces: chemical contrast and room-temperature tip-induced motion by Wee, A, Dixon, R, Egdell, R, Foord, J, Fishlock, T, Pethica, J

Improved NiSi salicide process using presilicide N2+ implant for MOSFETs by Wee, A. T. S., Chan, L., Mangelinck, D., Lee, Pooi See, Pey, Kin Leong, Ding, Jun

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SURFACE CHEMICAL PROCESSES IN METAL ORGANIC MOLECULAR-BEAM EPITAXY - GA DEPOSITION FROM TRIETHYLGALLIUM ON GAAS(100) by Murrell, A, Wee, A, Fairbrother, D, Singh, N, Foord, J, Davies, G, Andrews, D

SURFACE STUDIES OF THE THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS (100) by Murrell, A, Wee, A, Fairbrother, D, Singh, N, Foord, J, Davies, G, Andrews, D

THE THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS (100) by Murrell, A, Wee, A, Fairbrother, D, Singh, N, Foord, J, Davies, G, Andrews, D

Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs by Cheah, Weng Kwong, Fan, Weijun, Yoon, Soon Fatt, Loke, Wan Khai, Liu, R., Wee, A. T. S.

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Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy by Fan, Weijun, Yoon, Soon Fatt, Ng, T. K., Wang, S. Z., Loke, Wan Khai, Liu, R., Wee, A.

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Role of δ-Hole-Doped Interfaces at Ohmic Contacts to Organic Semiconductors by Zhou, M, Chua, L, Png, R, Yong, C, Sivaramakrishnan, S, Chia, P, Wee, A, Friend, R, Ho, P