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  1. 1
    Simulation study of a fast speed trench Schottky rectifier with an isolated gate

    Simulation study of a fast speed trench Schottky rectifier with an isolated gate by Xianguo Xu, Minqiang Liu, Chao Zeng, Wensuo Chen

    Published 2023-11-01
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    Article
  2. 2
    New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

    New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs by Kunfeng Zhu, Peijian Zhang, Zicheng Xu, Tao Wang, Xiaohui Yi, Min Hong, Yonghui Yang, Guangsheng Zhang, Jian Liu, Jianan Wei, Yang Pu, Dong Huang, Ting Luo, Xian Chen, Xinyue Tang, Kaizhou Tan, Wensuo Chen

    Published 2023-01-01
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    Article

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