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  1. 1
    Characteristics of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

    Characteristics of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory by Da Hee Hong, Jae Hoon Yoo, Won Ji Park, So Won Kim, Jong Hwan Kim, Sae Hoon Uhm, Hee Chul Lee

    Published 2023-02-01
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  2. 2
    Preparation of Remote Plasma Atomic Layer-Deposited HfO<sub>2</sub> Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices

    Preparation of Remote Plasma Atomic Layer-Deposited HfO<sub>2</sub> Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices by Jae-Hoon Yoo, Won-Ji Park, So-Won Kim, Ga-Ram Lee, Jong-Hwan Kim, Joung-Ho Lee, Sae-Hoon Uhm, Hee-Chul Lee

    Published 2023-06-01
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    Article

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