Towards developing an intergrated maturity model framework for managing an enterprise business intelligence by Chuah, M.H., Wong, K.L.

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Compact device modelling of interface trap charges with quantum capacitance in mos2-based field-effect transistors by Leong, C. H., Chuan, M. W., Wong, K. L., Najam, F., Yu, Y. S., Tan, M. L. P.

Electronic properties of zigzag silicene nanoribbons with single vacancy defect by Chuan, M. W., Wong, K. L., Hamzah, A., Alias, N. E., Lim, C. S., Tan, M. L. P.

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Electronic properties of silicene nanoribbons using tight-binding approach by Chuan, M. W., Wong, K. L., Hamzah, A., Alias, N. E., Lim, C. S., Tan, M. L. P.

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Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure by Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

Carrier statistics of highly doped armchair graphene nanoribbons with edge disorder by Wong, K. L., Chuan, M. W., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

A review of the top of the barrier nanotransistor models for semiconductor nanomaterials by Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

Two-dimensional modelling of uniformly doped silicene with aluminium and its electronic properties by Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

Device performance of silicene nanoribbon field-effect transistor under ballistic transport by Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

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Device modelling and performance analysis of two-dimensional AlSi3 ballistic nanotransistor by Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.

Electronic Properties of Graphene Nanoribbons With Line-Edge Roughness Doped with Nitrogen and Boron by Wong, K. L., Chuan, M. V., Hamzah, A., Rusli, S., Alias, N. E., Mohamed Sultan, S., Lim, C. S., Tan, M. L. P.

Modeling of low-dimensional pristine and vacancy incorporated graphene nanoribbons using tight binding model and their electronic structures by Wong, K. L., Chuan, M. W., Chong, W. K., Alias, N. E., Hamzah, A., Lim, C. S., Tan, M. L. P.

Influence of single vacancy defect at varying length on electronic properties of zigzag graphene nanoribbons by Wong, K. L., Chuan, M. W., Chong, W. K., Hamzah, A., Rusli, M. S., Alias, N. E., Lim, C. S., Tan, M.

Low-dimensional modelling of n-type doped silicene and its carrier transport properties for nanoelectronic applications by Chuan, M. W., Lau, J. Y., Wong, K. L., Hamzah, A., Alias, N. E., Lim, C. S., Tan, M. L. P.

Edge perturbation on electronic properties of boron nitride nanoribbons by Wong, K. L., Lai, K. W., Chuan, M. W., Wong, Y., A. Hamzah, A. Hamzah, Rusli, S., Alias, N. E., Mohamed Sultan, S., Lim, C. S., Tan, M. L. P.