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The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs by Dongyoung Kim, Nick Yun, Adam J. Morgan, Woongje Sung
Published 2022-01-01
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An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs by Dongyoung Kim, Nick yun, Seung Yup Jang, Adam J. Morgan, Woongje Sung
Published 2021-01-01
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Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations by Stephen A. Mancini, Seung Yup Jang, Zeyu Chen, Dongyoung Kim, Alex Bialy, Balaji Raghotamacher, Michael Dudley, Nadeemullah Mahadik, Robert Stahlbush, Mowafak Al-Jassim, Woongje Sung
Published 2024-01-01
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