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    2T1C DRAM based on semiconducting MoS<sub>2</sub> and semimetallic graphene for in-memory computing

    2T1C DRAM based on semiconducting MoS<sub>2</sub> and semimetallic graphene for in-memory computing de réir Gou Saifei, Wang Yin, Dong Xiangqi, Xu Zihan, Wang Xinyu, Sun Qicheng, Xie Yufeng, Zhou Peng, Bao Wenzhong

    Foilsithe / Cruthaithe 2023-06-01
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