Process development of BaZrO3-BaCeO3 based electrolytes for proton-conducting solid oxide fuel cells by Xie, Hanlin

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Fabrication of yttrium-doped barium zirconate thin films with sub-micrometer thickness by a sol–gel spin coating method by Xie, Hanlin, Su, Pei-Chen

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Low temperature synthesis of sub-micrometer yttria-doped barium zirconate thin films by modified chemical solution deposition technique by Biswas, Mridula, Xie, Hanlin, Su, Pei-Chen

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Spray coating of dense proton-conducting BaCe0.7Zr0.1Y0.2O3 electrolyte for low temperature solid oxide fuel cells by Fan, Liangdong, Xie, Hanlin, Su, Pei-Chen

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Fabrication of yttria-doped barium zirconate electrolyte with sub-micrometer thickness via low temperature viscous flow sintering by Biswas, Mridula, Xie, Hanlin, Baek, Jong Dae, Su, Pei-Chen

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Gas-tight yttria-doped barium zirconate thin film electrolyte via chemical solution deposition technique by Biswas, Mridula, Xie, Hanlin, Baek, Jong Dae, Su, Pei-Chen

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Rapid thermal processing of chemical-solution-deposited yttrium-doped barium zirconate thin films by Xie, Hanlin, Biswas, Mridula, Fan, Liangdong, Li, Yong, Su, Pei-Chen

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Pulsed laser deposition of epitaxial MgO buffer layer for proton-conducting ceramic electrolytes by Li, Yong, Wong, Lai Mun, Xie, Hanlin, Wang, Shijie, Su, Pei-Chen

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Nanoporous palladium anode for direct ethanol solid oxide fuel cells with nanoscale proton-conducting ceramic electrolyte by Li, Yong, Wong, Lai Mun, Xie, Hanlin, Wang, Shijie, Su, Pei-Chen

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A hybrid GaN HEMT model merging artificial neural networks and ASM-HEMT for parameter precision and scalability by Lu, Zhongzhiguang, Li, Hanchao, Xie, Hanlin, Zhuang, Yihao, Wang, Wensong, Ng, Geok Ing, Zheng, Yuanjin

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Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique by Zhuang, Yihao, Ranjan, Kumud, Xie, Qingyun, Xie, Hanlin, Li, Hanchao, Wang, Yue, Liu, Siyu, Ng, Geok Ing

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Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si by Liu, Siyu, Zhuang, Yihao, Li, Hanchao, Xie, Qingyun, Wang, Yue, Xie, Hanlin, Ranjan, Kumud, Ng, Geok Ing

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AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets by Li, Hanchao, Xie, Hanlin, Xie, Qingyun, Liu, Siyu, Wang, Yue, Wang, Yuxuan, Ranjan, Kumud, Zhuang, Yihao, Gong, Xiao, Ng, Geok Ing

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First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding by Li, Hanchao, Xie, Hanlin, Wang, Yue, Yulia, Lekina, Ranjan, Kumud, Singh, Navab, Chung, Surasit, Lee, Kenneth E., Arulkumaran, Subramaniam, Ng, Geok Ing

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High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers by Loke Wan Khai, Wang Yue, Lee Kwang Hong, Liu Zhihong, Xie Hanlin, Chiah Siau Ben, Kenneth Lee Eng Kian, Zhou Xing, Chuan Seng Tan, Ng Geok Ing, Eugene A. Fitzgerald, Yoon Soon Fatt

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High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers by Loke, Wan Khai, Wang, Yue, Lee, Kwang Hong, Liu, Zhihong, Xie, Hanlin, Chiah, Siau Ben, Lee, Kenneth Eng Kian, Zhou, Xing, Tan, Chuan Seng, Ng, Geok Ing, Fitzgerald, Eugene A., Yoon, Soon Fatt

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