Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots by Xu, S. J., Wang, X. C., Chua, S. J., Wang, C. H., Fan, Weijun, Jiang, J., Xie, X. G.

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Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing by Wang, X. C., Xu, S. J., Chua, S. J., Zhang, Zi-Hui, Fan, Weijun, Wang, C. H., Jiang, J., Xie, X. G.

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Polarization dependence of intraband absorption in self-organized quantum dots by Chua, S. J., Xu, S. J., Zhang, X. H., Wang, X. C., Mei, T., Fan, Weijun, Wang, C. H., Jiang, J., Xie, X. G.

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Characteristics of InGaAs quantum dot infrared photodetectors by Xu, S. J., Chua, S. J., Mei, T., Wang, X. C., Zhang, X. H., Karunasiri, G., Fan, Weijun, Wang, C. H., Jiang, J., Wang, S., Xie, X. G.

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