Low temperature direct wafer bonding of GaAs to Si via plasma activation by Xu, D. W., Fitzgerald, Eugene A., Yeo, Chiew Yong, Yoon, Soon Fatt

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1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process by Yoon, Soon Fatt, Tong, Cunzhu, Fan, Weijun, Ding, Y., Zhao, L. J., Xu, D. W.

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Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure by Ding, Y., Ma, B. S., Xu, D. W., Liang, S., Zhao, L. J., Wasiak, M., Czyszanowski, T., Nakwaski, W., Fan, Weijun, Yoon, Soon Fatt

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Constraining the Evolution of ZZ Ceti by Mukadam A. S., Kepler S. O., Winget D. E., Nather R. E., Kilic M., Mullally F., Hippel T. von, Kleinman S. J., Nitta A., Guzik J. A., Bradley P. A., Matthews J., Sekiguchi K., Sullivan D. J., Shobbrook R. R., Birch P., Jiang X. J., Xu D. W., Joshi S., Ashoka B.N., Ibbetson P., Leibowitz E., Ofek E. O., Meištas E. G., Janulis R., Ališauskas D., Kalytis R., Handler G., Kilkenny D., O’Donoghue D., Kurtz D. W., Müller M., Moskalik P., Ogłoza W., Zoła S., Krzesiński J., Johannessen F., Gonzalez-Perez J. M., Solheim J-E., Silvotti R., Bernabei S., Vauclair G., Dolez N., Fu J. N., Chevreton M., Manteiga M., Súarez O., Ulla A., Cunha M. S., Metcalfe T. S., Kanaan A., Fraga L., Costa A. F. M., Giovannini O., Fontaine G., Bergeron P., O’Brien M. S., Sanwal D., Wood M. A., Ahrens T. J., Silvestri N., Klumpe E. W., Kawaler S. D., Riddle R., Reed M. D., Watson T. K.

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