Showing 1 - 20 results of 20 for search 'Yarrison-Rice, J', query time: 0.06s
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1
Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires by Titova, L, Hoang, T, Jackson, H, Smith, L, Yarrison-Rice, J, Kim, Y, Joyce, H, Tan, H, Jagadish, C
Published 2006Journal article -
2
Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires. by Hoang, T, Titova, L, Yarrison-Rice, J, Jackson, H, Govorov, A, Kim, Y, Joyce, H, Tan, H, Jagadish, C, Smith, L
Published 2007Journal article -
3
Compound semiconductor nanowires for optoelectronic device applications by Gao, Q, Joyce, H, Paiman, S, Kang, J, Tan, H, Jagadish, C, Jackson, H, Smith, L, Yarrison-Rice, J, Zou, J
Published 2011Journal article -
4
Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires by Smith, L, Hoang, T, Titova, L, Jackson, H, Yarrison-Rice, J, Lensch, J, Lauhon, L, Kim, Y, Joyce, H, Jagadish, C
Published 2007Conference item -
5
Optical properties of single InP and GaAs nanowire heterostructures by Jackson, H, Perera, S, Fickenscher, M, Smith, L, Yarrison-Rice, J, Joyce, H, Gao, Q, Tan, H, Jagadish, C, Zhang, X, Zou, J
Published 2008Conference item -
6
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires by Mishra, A, Titova, L, Hoang, T, Jackson, H, Smith, L, Yarrison-Rice, J, Kim, Y, Joyce, H, Gao, Q, Tan, H, Jagadish, C
Published 2007Journal article -
7
III-V compound semiconductor nanowires for optoelectronic device applications by Gao, Q, Joyce, H, Paiman, S, Kang, J, Tan, H, Kim, Y, Smith, L, Jackson, H, Yarrison-Rice, J, Zou, J, Jagadish, C
Published 2011Journal article -
8
III-V compound semiconductor nanowires by Joyce, H, Paiman, S, Gao, Q, Tan, H, Kim, Y, Smith, L, Jackson, H, Yarrison-Rice, J, Zhang, X, Zou, J, Jagadish, C
Published 2009Conference item -
9
Epitaxy of III-V semiconductor nanowires towards optoelectronic devices by Gao, Q, Joyce, H, Paiman, S, Tan, H, Kim, Y, Smith, L, Jackson, H, Yarrison-Rice, J, Zhang, X, Zou, J, Jagadish, C
Published 2009Conference item -
10
Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures by Perera, S, Fickenscher, M, Jackson, H, Smith, L, Yarrison-Rice, J, Joyce, H, Gao, Q, Tan, H, Jagadish, C, Zhang, X, Zou, J
Published 2008Journal article -
11
III-V semiconductor nanowires for optoelectronic device applications by Joyce, H, Gao, Q, Tan, H, Jagadish, C, Kim, Y, Zou, J, Smith, L, Jackson, H, Yarrison-Rice, J, Parkinson, P, Johnston, M
Published 2011Journal article -
12
III-V semiconductor nanowires for optoelectronic device applications by Joyce, H, Gao, Q, Hoe Tan, H, Jagadish, C, Kim, Y, Zou, J, Smith, L, Jackson, H, Yarrison-Rice, J, Parkinson, P, Johnston, M
Published 2011Journal article -
13
Nanowires for optoelectronic device applications by Gao, Q, Joyce, H, Paiman, S, Kang, J, Tan, H, Kim, Y, Smith, L, Jackson, H, Yarrison-Rice, J, Zhang, X, Zou, J, Jagadish, C
Published 2009Journal article -
14
Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires. by Titova, L, Hoang, T, Yarrison-Rice, J, Jackson, H, Kim, Y, Joyce, H, Gao, Q, Tan, H, Jagadish, C, Zhang, X, Zou, J, Smith, L
Published 2007Journal article -
15
Unexpected benefits of rapid growth rate for III-V nanowires. by Joyce, H, Gao, Q, Tan, H, Jagadish, C, Kim, Y, Fickenscher, M, Perera, S, Hoang, T, Smith, L, Jackson, H, Yarrison-Rice, J, Zhang, X, Zou, J
Published 2009Journal article -
16
High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization by Joyce, H, Gao, Q, Tan, H, Jagadish, C, Kim, Y, Fickenscher, M, Perera, S, Hoang, T, Smith, L, Jackson, H, Yarrison-Rice, J, Zhang, X, Zou, J
Published 2008Journal article -
17
Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates by Kang, J, Gao, Q, Joyce, H, Tan, H, Jagadish, C, Kim, Y, Guo, Y, Xu, H, Zou, J, Fickenscher, M, Smith, L, Jackson, H, Yarrison-Rice, J
Published 2011Journal article -
18
Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates by Kang, J, Gao, Q, Joyce, H, Kim, Y, Guo, Y, Xu, H, Zou, J, Fickenscher, M, Smith, L, Jackson, H, Yarrison-Rice, J, Tan, H, Jagadish, C
Published 2010Conference item -
19
Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates by Kang, J, Gao, Q, Joyce, H, Tan, H, Jagadish, C, Kim, Y, Guo, Y, Xu, H, Zou, J, Fickenscher, M, Smith, L, Jackson, H, Yarrison-Rice, J
Published 2010Conference item -
20
Novel growth and properties of GaAs nanowires on Si substrates. by Kang, J, Gao, Q, Joyce, H, Tan, H, Jagadish, C, Kim, Y, Choi, D, Guo, Y, Xu, H, Zou, J, Fickenscher, M, Smith, L, Jackson, H, Yarrison-Rice, J
Published 2010Journal article