Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors by Low, Tony, Li, M. F., Yeo, Y. C., Fan, Weijun, Ng, S. T., Kwong, Dim Lee

Get full text
Get full text

Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate by Chia, Ching Kean, Xu, Z., Yoon, S. F., Yeo, Y. C., Cheng, Y. B., Dalapati, G. K.

Get full text
Get full text

A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture by Liu, W. J., Yeo, Y. C., Nguyen, B. Y., Tran, Xuan Anh, Zhu, Wei, Yu, Hongyu

Get full text
Get full text

Integration of TaOx-based resistive-switching element and GaAs diode by Chi, Dong Zhi, Xu, Z., Tong, X., Yoon, S. F., Yeo, Y. C., Dalapati, G. K., Chia, Ching Kean

Get full text
Get full text

A GENOME-WIDE ASSOCIATION STUDY IN INDIAN ASIANS IDENTIFIES FOUR SUSCEPTIBILITY LOCI FOR TYPE-2 DIABETES by Sehmi, J, Salaheen, D, Yeo, Y, Zhang, W, Das, D, McCarthy, M, Tai, E, Danesh, J, Kooner, J, Chambers, J

Resistive switching in a GaOx-NiOx p-n heterojunction by Sun, Xiaowei, Leck, Kheng Swee, Zheng, K., Zhao, J. L., Vinh, V. Q., Zhao, R., Yeo, Y. G., Law, L. T., Teo, K. L.

Get full text
Get full text

A self-rectifying HfOx-based unipolar RRAM with NiSi electrode by Tran, Xuan Anh, Gao, Bin, Yu, Hongyu, Zhu, W. G., Kang, J. F., Liu, W. J., Fang, Z., Wang, Z. R., Yeo, Y. C., Nguyen, B. Y., Li, M. F.

Get full text
Get full text