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Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy by Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I.
Published 2015
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Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform by Yiding Lin, Zheng Yong, Xianshu Luo, Saeed Sharif Azadeh, Jared C. Mikkelsen, Ankita Sharma, Hong Chen, Jason C. C. Mak, Patrick Guo-Qiang Lo, Wesley D. Sacher, Joyce K. S. Poon
Published 2022-10-01
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