Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode by Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchun Ye, Zhi Jin

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Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode by Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Ke Wei, Hao Wu, Xinyu Liu, Tianchun Ye, Zhi Jin

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Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics by Yue Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, Guoqi Zhang

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First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology by Yue Sun, Xuanwu Kang, Shixiong Deng, Yingkui Zheng, Ke Wei, Linwang Xu, Hao Wu, Xinyu Liu

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Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate by Pengfei Li, Shuhua Wei, Xuanwu Kang, Yingkui Zheng, Jing Zhang, Hao Wu, Ke Wei, Jiang Yan, Xinyu Liu

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Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an ‘Ohmic-Before-Passivation’ Process by Yuan Ji, Sen Huang, Qimeng Jiang, Ruizhe Zhang, Jie Fan, Haibo Yin, Yingkui Zheng, Xinhua Wang, Ke Wei, Xinyu Liu

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