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Correction to: Light-Activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices by Tingting Zhong, Yongfu Qin, Fengzhen Lv, Haijun Qin, Xuedong Tian

Published 2022-01-01

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2

Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices by Tingting Zhong, Yongfu Qin, Fengzhen Lv, Haijun Qin, Xuedong Tian

Published 2021-12-01

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3

Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs<sub>2</sub>AgBiBr<sub>6</sub>-Based Memory Device by Fengzhen Lv, Tingting Zhong, Yongfu Qin, Haijun Qin, Wenfeng Wang, Fuchi Liu, Wenjie Kong

Published 2021-05-01

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4

$Multilevel resistive switching memory in lead-free double perovskite La $$_{2}$$ 2 NiFeO $$_{6}$$ 6 films$

Multilevel resistive switching memory in lead-free double perovskite La $$_{2}$$ 2 NiFeO $$_{6}$$ 6 films by Yongfu Qin, Yuan Gao, Fengzhen Lv, Fangfang Huang, Fuchi Liu, Tingting Zhong, Yuhang Cui, Xuedong Tian

Published 2023-08-01

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