The direct evidence of the composition pulling effect and its role in InGaN multiple quantum wells by Yuhao Ben, Feng Liang, Degang Zhao, Jing Yang, Ping Chen, Zongshun Liu

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The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties by Yuhao Ben, Feng Liang, Degang Zhao, Jing Yang, Zongshun Liu, Ping Chen

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The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation by Yuhao Ben, Feng Liang, Degang Zhao, Jing Yang, Ping Chen, Zongshun Liu

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Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells by Yachen Wang, Feng Liang, Degang Zhao, Yuhao Ben, Jing Yang, Zongshun Liu, Ping Chen

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Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells by Yuhao Ben, Feng Liang, Degang Zhao, Xiaowei Wang, Jing Yang, Zongshun Liu, Ping Chen

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Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells by Yachen Wang, Feng Liang, Degang Zhao, Yuhao Ben, Jing Yang, Zongshun Liu, Ping Chen

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Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells by Haoran Sun, Yuhui Chen, Yuhao Ben, Hongping Zhang, Yujie Zhao, Zhihao Jin, Guoqi Li, Mei Zhou

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The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si by Zhenzhuo Zhang, Jing Yang, Degang Zhao, Baibin Wang, Yuheng Zhang, Feng Liang, Ping Chen, Zongshun Liu, Yuhao Ben

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