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    Strong Nonlinear Capacitive Behavior of a GaN/AlN Varactor Based on Dual-Schottky Junctions With a Cutoff Frequency of 1.5 THz

    Strong Nonlinear Capacitive Behavior of a GaN/AlN Varactor Based on Dual-Schottky Junctions With a Cutoff Frequency of 1.5 THz por Yuhuan Jiang, Tao Guo, Kai Wang, Jielong Liu, Chengcheng Li, Qi He, Qichao Ding, Chang Wu

    Publicado em 2024-01-01
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