First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding by Li, Hanchao, Xie, Hanlin, Wang, Yue, Yulia, Lekina, Ranjan, Kumud, Singh, Navab, Chung, Surasit, Lee, Kenneth E., Arulkumaran, Subramaniam, Ng, Geok Ing

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