Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering by Ang, Diing Shenp, Zhang, H. Z., Yew, K. S., Wang, X. P.

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Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch by Zhang, H. Z., Ang, Diing Shenp, Zhou, Yu, Wang, Xin Peng

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Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device by Ang, Diing Shenp, Zhang, H. Z., Gu, C. J., Yew, K. S., Wang, X. P., Lo, G. Q.

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White-light-induced disruption of nanoscale conducting filament in hafnia by Zhang, H. Z., Bersuker, G., Zhou, Y., Yew, Kwang Sing, Ang, Diing Shenp, Kawashima, Tomohito, Bera, Milan Kumar

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