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Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping by Wu, L., Wang, Zhongrui, Zhu, W. G., Du, A. Y., Fang, Z., Tran, Xuan Anh, Liu, W. J., Zhang, K. L., Yu, Hongyu
Published 2013
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Journal Article