Modeling of lightly doped drain (LDD) MOSFET for ciruit simulation /

Modeling of lightly doped drain (LDD) MOSFET for ciruit simulation /

Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Elektronik)) - Universiti Teknologi Malaysia, 2007

מידע ביבליוגרפי
Main Authors: 188525 Mohamed Hanis Hassan, Tan, Michael Loong Peng, Fakulti Kejuruteraan Elektrik
פורמט:
שפה:eng
יצא לאור: 2007
נושאים:
Integrated circuits
Metal oxide semiconductor field-effect transistors

פריטים דומים