Plasma etching of films at high rates /

PSZJBL

Bibliographic Details
Main Author: 427147 Heinecke, R. A. H.
Format:
Subjects:
_version_ 1796681262565425152
author 427147 Heinecke, R. A. H.
author_facet 427147 Heinecke, R. A. H.
author_sort 427147 Heinecke, R. A. H.
collection OCEAN
description PSZJBL
first_indexed 2024-03-04T21:25:32Z
format
id KOHA-OAI-TEST:178837
institution Universiti Teknologi Malaysia - OCEAN
last_indexed 2024-03-04T21:25:32Z
record_format dspace
spelling KOHA-OAI-TEST:1788372020-12-19T17:04:55ZPlasma etching of films at high rates / 427147 Heinecke, R. A. H. PSZJBLPlasma (Ionized gases)Aluminum film
spellingShingle Plasma (Ionized gases)
Aluminum film
427147 Heinecke, R. A. H.
Plasma etching of films at high rates /
title Plasma etching of films at high rates /
title_full Plasma etching of films at high rates /
title_fullStr Plasma etching of films at high rates /
title_full_unstemmed Plasma etching of films at high rates /
title_short Plasma etching of films at high rates /
title_sort plasma etching of films at high rates
topic Plasma (Ionized gases)
Aluminum film
work_keys_str_mv AT 427147heineckerah plasmaetchingoffilmsathighrates