Plasma etching of films at high rates /
PSZJBL
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author | 427147 Heinecke, R. A. H. |
author_facet | 427147 Heinecke, R. A. H. |
author_sort | 427147 Heinecke, R. A. H. |
collection | OCEAN |
description | PSZJBL |
first_indexed | 2024-03-04T21:25:32Z |
format | |
id | KOHA-OAI-TEST:178837 |
institution | Universiti Teknologi Malaysia - OCEAN |
last_indexed | 2024-03-04T21:25:32Z |
record_format | dspace |
spelling | KOHA-OAI-TEST:1788372020-12-19T17:04:55ZPlasma etching of films at high rates / 427147 Heinecke, R. A. H. PSZJBLPlasma (Ionized gases)Aluminum film |
spellingShingle | Plasma (Ionized gases) Aluminum film 427147 Heinecke, R. A. H. Plasma etching of films at high rates / |
title | Plasma etching of films at high rates / |
title_full | Plasma etching of films at high rates / |
title_fullStr | Plasma etching of films at high rates / |
title_full_unstemmed | Plasma etching of films at high rates / |
title_short | Plasma etching of films at high rates / |
title_sort | plasma etching of films at high rates |
topic | Plasma (Ionized gases) Aluminum film |
work_keys_str_mv | AT 427147heineckerah plasmaetchingoffilmsathighrates |