4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers /

It is confirmed that the multiplexer and the semiconductor laser can be operated up to 4 Gbit/s with pseudorandom pulse pattern. The relaxation oscillation, pattern effect and tailing effect of the semiconductor laser are alsostudied. It is confirmed that eye degradation is predominantly due to fluc...

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Autores principales: 437771 Hagimoto, K., Onta, N., Nakagawa, K
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author 437771 Hagimoto, K.
Onta, N.
Nakagawa, K
author_facet 437771 Hagimoto, K.
Onta, N.
Nakagawa, K
author_sort 437771 Hagimoto, K.
collection OCEAN
description It is confirmed that the multiplexer and the semiconductor laser can be operated up to 4 Gbit/s with pseudorandom pulse pattern. The relaxation oscillation, pattern effect and tailing effect of the semiconductor laser are alsostudied. It is confirmed that eye degradation is predominantly due to fluctuation of initial time delay caused by pattern effect, and tailing effect and relaxation oscillation are not fatal factors of 4 Gbit/s modulation under proper bias conditions.
first_indexed 2024-03-04T21:33:05Z
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id KOHA-OAI-TEST:181351
institution Universiti Teknologi Malaysia - OCEAN
last_indexed 2024-03-04T21:33:05Z
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spelling KOHA-OAI-TEST:1813512020-12-19T17:05:01Z4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers / 437771 Hagimoto, K. Onta, N. Nakagawa, K It is confirmed that the multiplexer and the semiconductor laser can be operated up to 4 Gbit/s with pseudorandom pulse pattern. The relaxation oscillation, pattern effect and tailing effect of the semiconductor laser are alsostudied. It is confirmed that eye degradation is predominantly due to fluctuation of initial time delay caused by pattern effect, and tailing effect and relaxation oscillation are not fatal factors of 4 Gbit/s modulation under proper bias conditions.Electronics letters. 18 (18) : 796-798 ; Sept 1982It is confirmed that the multiplexer and the semiconductor laser can be operated up to 4 Gbit/s with pseudorandom pulse pattern. The relaxation oscillation, pattern effect and tailing effect of the semiconductor laser are alsostudied. It is confirmed that eye degradation is predominantly due to fluctuation of initial time delay caused by pattern effect, and tailing effect and relaxation oscillation are not fatal factors of 4 Gbit/s modulation under proper bias conditions.12PSZJBLSemiconductor lasers
spellingShingle Semiconductor lasers
437771 Hagimoto, K.
Onta, N.
Nakagawa, K
4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers /
title 4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers /
title_full 4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers /
title_fullStr 4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers /
title_full_unstemmed 4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers /
title_short 4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers /
title_sort 4 gbit s direct modulation of 1 3 m ingaasp inp semiconductor lasers
topic Semiconductor lasers
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AT ontan 4gbitsdirectmodulationof13mingaaspinpsemiconductorlasers
AT nakagawak 4gbitsdirectmodulationof13mingaaspinpsemiconductorlasers