4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers /
It is confirmed that the multiplexer and the semiconductor laser can be operated up to 4 Gbit/s with pseudorandom pulse pattern. The relaxation oscillation, pattern effect and tailing effect of the semiconductor laser are alsostudied. It is confirmed that eye degradation is predominantly due to fluc...
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author | 437771 Hagimoto, K. Onta, N. Nakagawa, K |
author_facet | 437771 Hagimoto, K. Onta, N. Nakagawa, K |
author_sort | 437771 Hagimoto, K. |
collection | OCEAN |
description | It is confirmed that the multiplexer and the semiconductor laser can be operated up to 4 Gbit/s with pseudorandom pulse pattern. The relaxation oscillation, pattern effect and tailing effect of the semiconductor laser are alsostudied. It is confirmed that eye degradation is predominantly due to fluctuation of initial time delay caused by pattern effect, and tailing effect and relaxation oscillation are not fatal factors of 4 Gbit/s modulation under proper bias conditions. |
first_indexed | 2024-03-04T21:33:05Z |
format | |
id | KOHA-OAI-TEST:181351 |
institution | Universiti Teknologi Malaysia - OCEAN |
last_indexed | 2024-03-04T21:33:05Z |
record_format | dspace |
spelling | KOHA-OAI-TEST:1813512020-12-19T17:05:01Z4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers / 437771 Hagimoto, K. Onta, N. Nakagawa, K It is confirmed that the multiplexer and the semiconductor laser can be operated up to 4 Gbit/s with pseudorandom pulse pattern. The relaxation oscillation, pattern effect and tailing effect of the semiconductor laser are alsostudied. It is confirmed that eye degradation is predominantly due to fluctuation of initial time delay caused by pattern effect, and tailing effect and relaxation oscillation are not fatal factors of 4 Gbit/s modulation under proper bias conditions.Electronics letters. 18 (18) : 796-798 ; Sept 1982It is confirmed that the multiplexer and the semiconductor laser can be operated up to 4 Gbit/s with pseudorandom pulse pattern. The relaxation oscillation, pattern effect and tailing effect of the semiconductor laser are alsostudied. It is confirmed that eye degradation is predominantly due to fluctuation of initial time delay caused by pattern effect, and tailing effect and relaxation oscillation are not fatal factors of 4 Gbit/s modulation under proper bias conditions.12PSZJBLSemiconductor lasers |
spellingShingle | Semiconductor lasers 437771 Hagimoto, K. Onta, N. Nakagawa, K 4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers / |
title | 4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers / |
title_full | 4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers / |
title_fullStr | 4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers / |
title_full_unstemmed | 4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers / |
title_short | 4 Gbit/s direct modulation of 1.3 m InGaAsp/Inp semiconductor lasers / |
title_sort | 4 gbit s direct modulation of 1 3 m ingaasp inp semiconductor lasers |
topic | Semiconductor lasers |
work_keys_str_mv | AT 437771hagimotok 4gbitsdirectmodulationof13mingaaspinpsemiconductorlasers AT ontan 4gbitsdirectmodulationof13mingaaspinpsemiconductorlasers AT nakagawak 4gbitsdirectmodulationof13mingaaspinpsemiconductorlasers |