An integrable MOS neuristor line /
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New York: Institute of Electrical and Electronics Engineers,
1976
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author | 294070 Kulkarni-Kohli, C Newcomb, R. W. |
author_facet | 294070 Kulkarni-Kohli, C Newcomb, R. W. |
author_sort | 294070 Kulkarni-Kohli, C |
collection | OCEAN |
description | 16 |
first_indexed | 2024-03-04T21:42:23Z |
format | |
id | KOHA-OAI-TEST:184409 |
institution | Universiti Teknologi Malaysia - OCEAN |
last_indexed | 2024-03-04T21:42:23Z |
publishDate | 1976 |
publisher | New York: Institute of Electrical and Electronics Engineers, |
record_format | dspace |
spelling | KOHA-OAI-TEST:1844092020-12-19T17:05:07ZAn integrable MOS neuristor line / 294070 Kulkarni-Kohli, C Newcomb, R. W. New York: Institute of Electrical and Electronics Engineers,197616PSZKLLMetal oxide semiconductors |
spellingShingle | Metal oxide semiconductors 294070 Kulkarni-Kohli, C Newcomb, R. W. An integrable MOS neuristor line / |
title | An integrable MOS neuristor line / |
title_full | An integrable MOS neuristor line / |
title_fullStr | An integrable MOS neuristor line / |
title_full_unstemmed | An integrable MOS neuristor line / |
title_short | An integrable MOS neuristor line / |
title_sort | integrable mos neuristor line |
topic | Metal oxide semiconductors |
work_keys_str_mv | AT 294070kulkarnikohlic anintegrablemosneuristorline AT newcombrw anintegrablemosneuristorline AT 294070kulkarnikohlic integrablemosneuristorline AT newcombrw integrablemosneuristorline |