An integrable MOS neuristor line /

16

Bibliographic Details
Main Authors: 294070 Kulkarni-Kohli, C, Newcomb, R. W.
Format:
Published: New York: Institute of Electrical and Electronics Engineers, 1976
Subjects:
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author 294070 Kulkarni-Kohli, C
Newcomb, R. W.
author_facet 294070 Kulkarni-Kohli, C
Newcomb, R. W.
author_sort 294070 Kulkarni-Kohli, C
collection OCEAN
description 16
first_indexed 2024-03-04T21:42:23Z
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id KOHA-OAI-TEST:184409
institution Universiti Teknologi Malaysia - OCEAN
last_indexed 2024-03-04T21:42:23Z
publishDate 1976
publisher New York: Institute of Electrical and Electronics Engineers,
record_format dspace
spelling KOHA-OAI-TEST:1844092020-12-19T17:05:07ZAn integrable MOS neuristor line / 294070 Kulkarni-Kohli, C Newcomb, R. W. New York: Institute of Electrical and Electronics Engineers,197616PSZKLLMetal oxide semiconductors
spellingShingle Metal oxide semiconductors
294070 Kulkarni-Kohli, C
Newcomb, R. W.
An integrable MOS neuristor line /
title An integrable MOS neuristor line /
title_full An integrable MOS neuristor line /
title_fullStr An integrable MOS neuristor line /
title_full_unstemmed An integrable MOS neuristor line /
title_short An integrable MOS neuristor line /
title_sort integrable mos neuristor line
topic Metal oxide semiconductors
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AT newcombrw anintegrablemosneuristorline
AT 294070kulkarnikohlic integrablemosneuristorline
AT newcombrw integrablemosneuristorline