Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs /

PRZSL

Bibliografische gegevens
Hoofdauteurs: Yau, Wei Heong, author, Mohammad Taghi Ahmadi, author, Razali Ismail, author, Regional Conference on Solid State Science and Technology (2009 : Pulau Pinang)
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Gepubliceerd in: Skudai : Universiti Teknologi Malaysia, 2009
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author Yau, Wei Heong, author
Mohammad Taghi Ahmadi, author
Razali Ismail, author
Regional Conference on Solid State Science and Technology (2009 : Pulau Pinang)
author_facet Yau, Wei Heong, author
Mohammad Taghi Ahmadi, author
Razali Ismail, author
Regional Conference on Solid State Science and Technology (2009 : Pulau Pinang)
author_sort Yau, Wei Heong, author
collection OCEAN
description PRZSL
first_indexed 2024-03-05T01:13:55Z
format
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institution Universiti Teknologi Malaysia - OCEAN
language
last_indexed 2024-03-05T01:13:55Z
publishDate 2009
publisher Skudai : Universiti Teknologi Malaysia,
record_format dspace
spelling KOHA-OAI-TEST:2548362020-12-19T17:08:01ZAnalytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs / Yau, Wei Heong, author Mohammad Taghi Ahmadi, author Razali Ismail, author Regional Conference on Solid State Science and Technology (2009 : Pulau Pinang) Skudai : Universiti Teknologi Malaysia,2009 PRZSL
spellingShingle Yau, Wei Heong, author
Mohammad Taghi Ahmadi, author
Razali Ismail, author
Regional Conference on Solid State Science and Technology (2009 : Pulau Pinang)
Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs /
title Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs /
title_full Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs /
title_fullStr Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs /
title_full_unstemmed Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs /
title_short Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs /
title_sort analytical threshold voltage model of nanoscale biaxial ultrathin strained si mosfets
work_keys_str_mv AT yauweiheongauthor analyticalthresholdvoltagemodelofnanoscalebiaxialultrathinstrainedsimosfets
AT mohammadtaghiahmadiauthor analyticalthresholdvoltagemodelofnanoscalebiaxialultrathinstrainedsimosfets
AT razaliismailauthor analyticalthresholdvoltagemodelofnanoscalebiaxialultrathinstrainedsimosfets
AT regionalconferenceonsolidstatescienceandtechnology2009pulaupinang analyticalthresholdvoltagemodelofnanoscalebiaxialultrathinstrainedsimosfets