Characterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket /

PRZSL

Détails bibliographiques
Auteurs principaux: Munawar Riyadi, author, Zul Atfyi Fauzan Mohammed Napiah, 1983-, author, Ismail Saad, author, Razali Ismail, author, IEEE International Conference on Semiconductor Electronic (2008: Johor)
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Publié: Skudai : Universiti Teknologi Malaysia, 2008
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author Munawar Riyadi, author
Zul Atfyi Fauzan Mohammed Napiah, 1983-, author
Ismail Saad, author
Razali Ismail, author
IEEE International Conference on Semiconductor Electronic (2008: Johor)
author_facet Munawar Riyadi, author
Zul Atfyi Fauzan Mohammed Napiah, 1983-, author
Ismail Saad, author
Razali Ismail, author
IEEE International Conference on Semiconductor Electronic (2008: Johor)
author_sort Munawar Riyadi, author
collection OCEAN
description PRZSL
first_indexed 2024-03-05T01:20:28Z
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institution Universiti Teknologi Malaysia - OCEAN
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last_indexed 2024-03-05T01:20:28Z
publishDate 2008
publisher Skudai : Universiti Teknologi Malaysia,
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spelling KOHA-OAI-TEST:2570012020-12-19T17:08:06ZCharacterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket / Munawar Riyadi, author Zul Atfyi Fauzan Mohammed Napiah, 1983-, author Ismail Saad, author Razali Ismail, author IEEE International Conference on Semiconductor Electronic (2008: Johor) Skudai : Universiti Teknologi Malaysia,2008 PRZSL
spellingShingle Munawar Riyadi, author
Zul Atfyi Fauzan Mohammed Napiah, 1983-, author
Ismail Saad, author
Razali Ismail, author
IEEE International Conference on Semiconductor Electronic (2008: Johor)
Characterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket /
title Characterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket /
title_full Characterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket /
title_fullStr Characterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket /
title_full_unstemmed Characterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket /
title_short Characterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket /
title_sort characterization analysis of a novel approach in fabrication of cmos compatible vertical mosfets incorporating a dielectric pocket
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