Gallium arsenide nanowires formed by Au - assisted metal - organic chemical vapor deposition : effect of growth temperature /

Gallium arsenide nanowires formed by Au - assisted metal - organic chemical vapor deposition : effect of growth temperature /

PRZSL

Bibliographic Details
Main Authors:	Rosnita Muhammad, 1972-, author, Zulkafli Othaman, author, Yussof Wahab, author, Samsudi Sakrani, author, Wan Faizal Wan Ahmad, author, Mohd. Nazri, author
Format:
Language:
Published:	Skudai : Universiti Teknologi Malaysia, 2008

Similar Items

Growth rate gallium arsenide nanowires /
by: Rosnita Muhammad, 1972-, author, et al.
Published: (2009)

Structure and electrical properties of gallium arsenide nanowires grown by metal organic chemical vapor deposition /
by: Rosnita Muhammad, 1972-, et al.
Published: (2011)

Gold seed-particles assisted growth of indium gallium arsenide nanowires /
by: Edy Wibowo, 1986-, et al.
Published: (2011)

Vapor-liquid solid mechanism using gold colloids for the growth of GaAs nanowires
by: Muhammad, Rosnita, et al.
Published: (2008)

Structure and electrical properties of gallium arsenide nanowires grown by metal organic chemical vapor deposition [electronic resource] /
by: Rosnita Muhammad, 1972-
Published: (2011)

Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
by: Yussof Wahab,, et al.
Published: (2013)

Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique /
by: Nor Fadilah Mohamad Nasir, 1983-, author 620773
Published: (2019)

Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique /
by: Nor Fadilah Mohamad Nasir, 1983-, author 620773, et al.
Published: (2019)

Epitaxial methods of quantum device growth
by: Muhammad, Rosnita, et al.
Published: (2009)

Determination of orientation and tapering factor for indium gallium arsenide nanowires grown on different substrates /
by: Nur Syarmila Amat Tosirim, 1989-, et al.
Published: (2011)

Effect of plasma power and flow rate of silane gas on diameter of silicon nanowires by plasma enhanced chemical vapor deposition /
by: Habib Hamidinezhad, 1975-, author, et al.
Published: (2009)

Gallium arsenide /
by: Blakemore, John Sydney
Published: (1987)

Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
by: Rosnita, M, et al.
Published: (2012)

Structural characterization of silicon nanowires grown by a 150 MHz very high frequency plasma enhanced chemical vapor deposition /
by: Habib Hamidinezhad, 1975-, et al.
Published: (2011)

Growth and characteristics of islands and quantum dots of germanium and indium gallium arsenide /
by: Amira Saryati Ameruddin, 1985-, et al.
Published: (2010)

Gallium arsenide : proceedings /
by: International Gallium Arsenide Symposium, (2nd : 1968 Dallas, Texas), et al.
Published: (1969)

Uniform indium arsenide quantum dots formation /
by: Lim, Kheng Boo, 1981-, author, et al.
Published: (2007)

Growth of gallium nitride nanowires by low pressure chemical vapor deposition (LPCVD)
by: Wang, Jianbo
Published: (2013)

Investigating the Effects of Electromagnetic Fields and Dimensions on the Electronic Properties of Gallium Arsenide Nanowire with Aluminum-Gallium Arsenide Coating in The Presence of Spin-Orbit Interaction
by: Alirteza Ghaffari
Published: (2024-05-01)

Gold seed-particles assisted growth of indium gallium arsenide nanowires [electronic resource] /
by: Edy Wibowo, 1986-
Published: (2011)

Gallium arsenide and related compounds : proceedings
by: International Symposium on Gallium Arsenide and Related Compounds (4th : 1972 : Boulder, Colorado)
Published: (1973)

InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures
by: Muhammad, Rosnita, et al.
Published: (2008)

MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE
by: Alexander, H, et al.
Published: (1989)

Dielectric films on gallium arsenide /
by: 351413 Croydon, W. F., et al.
Published: (1981)

Gallium arsenide and related compounds,
by: International Symposium on Gallium Arsenide and related compounds (5th : 1974 : Deauville), et al.
Published: (1975)

Gallium arsenide and related compounds /
by: 472172 International Symposium on Gallium Arsenide and Related Compounds (13th : 1986 : Las Vegas), et al.
Published: (1987)

Gallium arsenide and related compounds /
by: International Symposium on Gallium Arsenide and Related Compounds (6th, 1976 : Edinburg), et al.
Published: (1977)

Experiments in gallium arsenide technology /
by: 225814 Branning, D. J., et al.
Published: (1988)

Growth and characteristics of islands and quantum dots of germanium and indium gallium arsenide /lcAmira Saryati Ameruddin
by: 541108 Amira Saryati Ameruddin,ld1985-, et al.

Feedback control of organometallic vapor-phase epitaxial growth of aluminum gallium arsenide devices
by: Warnick, Sean C. (Sean Charles)
Published: (2005)

Analysis of silicon nanowires synthesized from SIO on silicon wafer substrate
by: Hamidinezhad, Habib, et al.
Published: (2009)

Study on A.C properties of tin selenidethin films
by: Sakrani, Samsudi, et al.
Published: (2008)

The effect of growth time to the growth of indium gallium arsenide (InGaAs) quantum wires using MOCVD /
by: 504574 Nor Hamizah Nor Helmi,ld1989-, et al.
Published: (2010)

Gallium arsenide nanoparticles: synthesis and characterisation
by: Malik, M, et al.
Published: (2003)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
by: Wilshaw, P, et al.
Published: (1989)

Gallium arsenide and related compounds 1985 /
by: International Symposium on Gallium Arsenide and Related Compounds (12th : 1985 : Karuizawa, Japan)
Published: (1986)

Gallium arsenide and related compounds : proccedings /
by: International Symposium on Gallium Arsenide and Related Compounds (6th : 1976 : St. Louis), et al.
Published: (1977)

Gallium arsenide and related compounds, 1978 /
by: International Symposium on Gallium Arsenide and Related Compounds (7th : 1978 : St. Louis), et al.
Published: (1979)

Gallium arsenide and related compounds : proceedings /
by: International Symposium on Gallium Arsenide and Related Compounds, (3rd : 1970 : Aachen), et al.
Published: (1971)

Gallium nitride nanowire by nitridation of electrochemically grown gallium oxide on silicon [electronic resource] /
by: Norizzawati Mohd. Ghazali, 1990- , author
Published: (2015)