MOSFET - like carbon nanotube field effect transistor model /

MOSFET - like carbon nanotube field effect transistor model /

PRZSL

Bibliographic Details
Main Authors:	Mohammad Taghi Ahmadi, author, Yau, Wei Heong, 1983-, author, Ismail Saad, author, Razali Ismail, author, NSTI Nanotechnology Conference (2009 : Texas)
Format:
Language:
Published:	Skudai : Universiti Teknologi Malaysia, 2009

Similar Items

Numerical study of carrier velocity for P-type strained silicon MOSFET /
by: Yau, Wei Heong, 1983-, author, et al.
Published: (2009)

Modeling of mosfet like carbon nanotube field effect transistor /
by: Chong, Francis Khui Seng, 1984-, et al.
Published: (2009)

Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs /
by: Yau, Wei Heong, author, et al.
Published: (2009)

Carrier transport in carbon nanotube field effect transistor /
by: Mohammad Taghi Ahmadi, author, et al.
Published: (2008)

Numerical simulation characterization of 50nm MOSFET incorporating dielectric poket (DP - MOSFET) /
by: Zul Atfyi Fauzan Mohammed Napiah, 1983-, author, et al.
Published: (2007)

Sealing of vertical and lateral MOSFET in nanometer regime /
by: Ismail Saad, author, et al.
Published: (2007)

Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs
by: Heong, Yau Wei, et al.
Published: (2009)

Characterization of MOSFET-like carbon nanotube field effect transistor
by: Hashim, Abdul Manaf, et al.
Published: (2007)

Ballistic carrier transport in a quasi-two-dimensional nanoscale field effect transistor(FET) /
by: Ismail Saad, author, et al.
Published: (2008)

Modeling of mosfet like carbon nanotube field effect transistor [electronic resource] /
by: Chong, Francis Khui Seng, 1984-
Published: (2009)

Characterization of high transonductance mosfet-like carbon nanotube field effect transistor /
by: 459232 Hng, Hui Ping, et al.
Published: (2007)

Single wall carbon nanotube field effect transistor model
by: Ahmadi, Mohammad Taghi, et al.
Published: (2011)

Extraction of SPICE model for double gate vertical MOSFET /
by: Jatmiko Endro Suseno, author, et al.
Published: (2009)

Scaling and numerical simulation analysis of 50nn MOSFET incorporating dielectric pocket (DP - MOSFET) /
by: Razali Ismail, 1960-, author, et al.
Published: (2007)

Carbon nanotube and silicon nanowire nanoscale field effect transistor modeling /
by: 253894 Mohammad Taghi Ahmadi, et al.
Published: (2010)

Numerical simulation analysis of CMOS compatible process of 50nm vertical single and double gate MOSFET /
by: Ismail Said, author, et al.
Published: (2007)

Process and characterization of MOSFET incorporating dielectric pocket (DP-MOSFET) using TCAD tools /
by: Razali Ismail, 1960-, author, et al.
Published: (2007)

Channel engineering in vertical MOSFET for nanoscale /
by: Munawar Agus Riyadi, 1977-, author, et al.
Published: (2009)

Physics-based simulation of carrier velocity in 2-dimensional P-type MOSFET /
by: Munawar Agus Riyadi, 1977-, author, et al.
Published: (2009)

Numerical analysis of vertical double gate mosfets (VDGM) with dielectric pocket (DP) effects on silicon pillar for nanoscale transistor
by: Saad, Ismail, et al.
Published: (2009)

Design of nanoscale vertical impact ionization metal oxide semiconductor field effect transistor (MOSFET) for short channel effect control /
by: Muhammad Aiman Md. Shariff, 1988-, author, et al.
Published: (2011)

Numerical study of diffusion current characteristic for nondegenerate N-type strained silicon MOSFET /
by: 274745 Kang, Eng Siew, et al.
Published: (2009)

Current voltage characteristics of a carbon nanotube field effect transisitor /
by: 253894 Mohammad Taghi Ahmadi, et al.
Published: (2008)

The dependence of saturation velocity on temperature, inversion charge and electric field in a nanoscale MOSFET
by: Saad, Ismail, et al.
Published: (2010)

Characterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket /
by: Munawar Riyadi, author, et al.
Published: (2008)

Analysis of vertical and lateral structures for nanoscale field effect transistor (FET) /
by: Munawar Agus Riyadi, 1977-, author, et al.
Published: (2008)

Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor
by: Chek, Desmond C. Y., et al.
Published: (2010)

Numerical investigation of nanoscale and vertical MOSFET incorporating dielectric pocket /
by: Zul Atfyi Fauzan Mohammed Napiah, 1983-, author, et al.
Published: (2008)

An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor
by: Khademhosseini, Vahideh, et al.
Published: (2018)

Impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island
by: Khademhosseini, Vahideh, et al.
Published: (2019)

Silicon pillar thickness effect on vertical double gate MOSFET (VDGM) with oblique rotating implantation (ORI) method /
by: Munawar Agus Riyadi, 1977-, author, et al.
Published: (2008)

The impact of vacancy defects on the performance of a single-electron transistor with a carbon nanotube island
by: Khademhosseini, Vahideh, et al.
Published: (2019)

The effect of different ge concentration on the characteristics of strain silicon MOSFET /
by: Razali Ismail, 1960-, author, et al.
Published: (2007)

The ultimate ballistic drift velocity in carbon nanotubes /
by: Mohammad Taghi Ahmadi, author, et al.
Published: (2009)

Analytical modeling of current-voltage characteristics of phosphorene based field effect transistor
by: Zangi, Shiva, et al.
Published: (2018)

Artificial intelligence techniques for SPICE optimization of mosfet modeling
by: E. Suseno, Jatmiko, et al.
Published: (2009)

Enhanced performance of nanoscale vertical MOSFET by oblique rotating implantation (ORI) and fillet local oxidation(FILOX+ORI)technology /
by: Ismail Saad, 1974-, author, et al.
Published: (2009)

The sub-band effect on the graphene nanoribbon based field-effect transistor
by: Kiat, Wong King, et al.
Published: (2012)

Design and analysis of nanoscale vertical MOSFET using oblique rotating implantation (ORI) method with reduced parasitic capacitance
by: Ismail, Razali, et al.
Published: (2009)

Fault modeling of chirality variation for carbon nanotube field effect transistor and its effect on circuits performance [electronic resource] /
by: Mohammad Faizi Othman, 1983- author
Published: (2015)