Numerical study of carrier velocity for P-type strained silicon MOSFET /

Numerical study of carrier velocity for P-type strained silicon MOSFET /

PRZSL

Bibliographic Details
Main Authors: Yau, Wei Heong, 1983-, author, Mohammad Taghi Ahmadi, author, Jatmiko Endro Suseno, Razali Ismail, author, NSTI Nanotechnology Conference (2009 : Texas)
Format:
Language:eng
Published: Skudai : Universiti Teknologi Malaysia, 2009
Description
Summary:PRZSL

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