Sample preparation and hall effect measurement for N-type and P-type silicons /

Sample preparation and hall effect measurement for N-type and P-type silicons /

Project paper (Sarjana Muda Sains (Fizik Industri)) - Universiti Teknologi Malaysia, 2009

Bibliographic Details
Main Authors:	505569 Lai, Cing Xin, Muhammad Zaki Yaacob, Fakulti Sains
Format:
Language:	eng
Published:	2009

Similar Items

Sample preparation and hall effect measurement for N-type gallium arsenide (GaAs) /
by: Nor Hishamuddin Ab. Latif, 1989-, et al.
Published: (2012)

A study of annealing effect on contact resistance of aluminium film on P-type silicon /
by: 178776 Teoh, Chin Hong, et al.
Published: (2004)

Preparation of P-N junction diode using alloy method /
by: Khairul Ariffin Muhammad, 1988-, et al.
Published: (2010)

Determination of carrier concentration of n type silicon /
by: Nur Alleyna Farhana Mohd. Naim, 1986-, et al.

Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates
by: Chuah, Soo Kiet
Published: (2011)

Synthesis and characterization of silicon nanorod on n-type porous silicon
by: Behzad, Kasra, et al.
Published: (2016)

Development Of N-Type Spin-On Dopant For Silicon Devices
by: Ahmad Kamil, Suraya
Published: (2009)

IMPURITY-ASSOCIATED MAGNETOPHONON RESONANCE IN N-TYPE SILICON
by: Portal, J, et al.
Published: (1979)

P-type silicon nanowire transistor modeling and simulation /
by: Amir Hossein Fallahpour, 1981-, et al.
Published: (2009)

FORMATION OF POROUS SILICON ON A HIGHLY DOPED P-TYPE MONOCRYSTALLINE SILICON
by: A. D. Hurbo, et al.
Published: (2019-10-01)

Low field hall effect gaussmeter /
by: Muhammad Mustaqiim Zulkifli, 1988-, et al.
Published: (2010)

EFFECTIVE MASSES IN N-TYPE AND P-TYPE PB1-XGEXTE
by: Lewis, A, et al.
Published: (1980)

Analytical study of drift velocity in N-type silicon nanowires /
by: Amir Hossein Fallahpour, et al.
Published: (2009)

Analytical study of drift velocity in N - type silicon nanowires /
by: 268829 Choe, Yuet Sheng, et al.
Published: (2008)

Low field hall effect gauss-meter /
by: Farah Hanani Zulkifli, 1987-, et al.
Published: (2009)

Stable field effect surface passivation of n-type Cz silicon
by: Bonilla, R, et al.
Published: (2013)

Thermal conductivity and thermoelectric power of heavily doped n-type silicon
by: Brinson, Mike, et al.
Published: (1970)

Formation of porous silicon: mechanism of macropores formation in n-type si
by: Nurul Izni Rusli,, et al.
Published: (2013)

New vulnerabilities of RSA modulus type N = p²q
by: Nek Abd Rahman, Normahirah, et al.
Published: (2016)

Numerical study of carrier velocity for P-type strained silicon MOSFET /
by: Yau, Wei Heong, 1983-, author, et al.
Published: (2009)

P-type silicon nanowire transistor modeling and simulation [electronic resource] /
by: Amir Hossein Fallahpour, 1981-, et al.
Published: (2009)

The effect of oxide precipitates on minority carrier lifetime in p-type silicon
by: Murphy, J, et al.
Published: (2011)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
by: Murphy, J, et al.
Published: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
by: Murphy, J, et al.
Published: (2006)

EMISSION CHARACTERISTICS AND MORPHOLOGY OF WET ETCHED CATHODES IN P-TYPE SILICON
by: Boswell, E, et al.
Published: (1993)

Local current measurements for avalanche breakdown in Silicon p-n junctions
by: Poenar, Daniel P., et al.
Published: (2013)

Computerized hall effect measurement system /
by: 504701 Nge, Lai Soon,ld1987-, et al.
Published: (2010)

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.
by: Boland, J, et al.
Published: (2016)

Silicon (p-n) junction diodes/
by: 267485 Shields, J., et al.
Published: ([n d)

Penyediaan simpangan P-N dengan menggunakan kaedah pengaloian /
by: 245028 Norizan Pun, et al.
Published: (2005)

New vulnerability of RSA modulus type N = p2q
by: Nek Abd Rahman, Normahirah, et al.
Published: (2017)

Hybrid p-type ZnO film and n-type ZnO nanorod p-n homo-junction for efficient photovoltaic applications
by: Lee, J, et al.
Published: (2010)

Advanced hydrogenation of screen-printed p-type monocrystalline silicon solar cells
by: Hou, Junan
Published: (2018)

Increased photoconductivity lifetimes in GaAs nanowires via n-type and p-type shell doping
by: Boland, J, et al.
Published: (2016)

Numerical study of diffusion current characteristic for nondegenerate N-type strained silicon MOSFET /
by: 274745 Kang, Eng Siew, et al.
Published: (2009)

Extremely low surface recombination in 1 Ω cm n-type monocrystalline silicon
by: Bonilla Osorio, R, et al.
Published: (2016)

Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping
by: Deng, Shuo, et al.
Published: (2022)

Two dimensional particle-in-cell simulation model for Hall type thrusters
by: Beidler, Penh Koetwongjun, 1974-
Published: (2005)

Anomalous Hall effect and persistent valley currents in graphene p-n junctions/
by: Samutpraphoot, Polnop
Published: (2015)

A new type of phosphaferrocene–pyrrole–phosphaferrocene P-N-P pincer ligand
by: Tian, Rongqiang, et al.
Published: (2013)