Sample preparation and hall effect measurement for N-type and P-type silicons /
Project paper (Sarjana Muda Sains (Fizik Industri)) - Universiti Teknologi Malaysia, 2009
Main Authors: | 505569 Lai, Cing Xin, Muhammad Zaki Yaacob, Fakulti Sains |
---|---|
Format: | |
Language: | eng |
Published: |
2009
|
Similar Items
-
Sample preparation and hall effect measurement for N-type gallium arsenide (GaAs) /
by: Nor Hishamuddin Ab. Latif, 1989-, et al.
Published: (2012) -
A study of annealing effect on contact resistance of aluminium film on P-type silicon /
by: 178776 Teoh, Chin Hong, et al.
Published: (2004) -
Preparation of P-N junction diode using alloy method /
by: Khairul Ariffin Muhammad, 1988-, et al.
Published: (2010) -
Determination of carrier concentration of n type silicon /
by: Nur Alleyna Farhana Mohd. Naim, 1986-, et al. -
Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates
by: Chuah, Soo Kiet
Published: (2011)