Sputtering yield formula for B4C irradiated with monoenergetic ions at normal incidence /

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Bibliographic Details
Main Author: T. Ono
Format:
Published: Nagoya, Japan : NIFS, 1996
Subjects:
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author T. Ono
author_facet T. Ono
author_sort T. Ono
collection OCEAN
description 40
first_indexed 2024-03-05T04:32:05Z
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id KOHA-OAI-TEST:320834
institution Universiti Teknologi Malaysia - OCEAN
last_indexed 2024-03-05T04:32:05Z
publishDate 1996
publisher Nagoya, Japan : NIFS,
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spelling KOHA-OAI-TEST:3208342020-12-19T17:10:48ZSputtering yield formula for B4C irradiated with monoenergetic ions at normal incidence / T. Ono Nagoya, Japan : NIFS,199640PSZJBLSputtering (Physics)Nuclear fusion
spellingShingle Sputtering (Physics)
Nuclear fusion
T. Ono
Sputtering yield formula for B4C irradiated with monoenergetic ions at normal incidence /
title Sputtering yield formula for B4C irradiated with monoenergetic ions at normal incidence /
title_full Sputtering yield formula for B4C irradiated with monoenergetic ions at normal incidence /
title_fullStr Sputtering yield formula for B4C irradiated with monoenergetic ions at normal incidence /
title_full_unstemmed Sputtering yield formula for B4C irradiated with monoenergetic ions at normal incidence /
title_short Sputtering yield formula for B4C irradiated with monoenergetic ions at normal incidence /
title_sort sputtering yield formula for b4c irradiated with monoenergetic ions at normal incidence
topic Sputtering (Physics)
Nuclear fusion
work_keys_str_mv AT tono sputteringyieldformulaforb4cirradiatedwithmonoenergeticionsatnormalincidence