Low power n-p-n, 60 V, 600 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation

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• Low power n-p-n, 60 V, 600 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
  -н: 8096 British Standards Institution
• Low power p-n-p, 60 V, 500 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
  -н: 8096 British Standards Institution
• Detail specification for low power p-n-p, 60 V 500 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation.
  -н: 8096 British Standards Institution
• Detail specification of low noise, low paper p-n-p, 40 V, 300 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
  -н: 8096 British Standards Institution
• Low power n-p-n, 65 V, 600 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
  -н: 8096 British Standards Institution