Low power n-p-n, 65 V, 600 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation

Low power n-p-n, 65 V, 600 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation

Бусад хувилбаруудыг харуулах (1)

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Номзүйн дэлгэрэнгүй
Үндсэн зохиолч:	8096 British Standards Institution
Формат:
Нөхцлүүд:	Transistors Static relays

Ижил төстэй зүйлс

Low power n-p-n, 65 V, 600 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
-н: 8096 British Standards Institution

Low power p-n-p, 65 V, 500 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
-н: 8096 British Standards Institution

Low power p-n-p, 65 V, 500 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
-н: 8096 British Standards Institution

Low power n-p-n, 20 V, 300 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
-н: 8096 British Standards Institution

Low power n-p-n, 20 V, 300 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
-н: 8096 British Standards Institution

Low power, 25 V, 300 mW p-n-p switching transistor of assessed quality, ambient rated, hermetic encapsulation
-н: 8096 British Standards Institution

Low power switching transistor, N-P-N 45 V silicon planar epitaxial ambient rated hermetic encapsulation
-н: 8096 British Standards Institution

Low power n-p-n, 60 V, 600 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
-н: 8096 British Standards Institution

Low power n-p-n, 60 V, 600 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
-н: 8096 British Standards Institution

Low power p-n-p, 60 V, 500 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
-н: 8096 British Standards Institution

Detail specification for low power p-n-p, 60 V 500 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation.
-н: 8096 British Standards Institution

Detail specification of low noise, low paper p-n-p, 40 V, 300 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
-н: 8096 British Standards Institution

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General purpose switching diode of assessed quality : ambient rated, hermetic encapsulation, 20 V, 75 mA
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-н: 354777 Veronis, Andy
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