Low power switching transistor, N-P-N 45 V silicon planar epitaxial ambient rated hermetic encapsulation
PSZJBL
Main Author: | 8096 British Standards Institution |
---|---|
Format: | |
Subjects: |
Similar Items
-
Low power n-p-n, 20 V, 300 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution -
Low power n-p-n, 20 V, 300 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution -
Low power n-p-n, 65 V, 600 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution -
Low power n-p-n, 65 V, 600 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution -
Low power p-n-p, 65 V, 500 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution