Low power switching transistor, N-P-N 45 V silicon planar epitaxial ambient rated hermetic encapsulation

Low power switching transistor, N-P-N 45 V silicon planar epitaxial ambient rated hermetic encapsulation

PSZJBL

Bibliographic Details
Main Author:	8096 British Standards Institution
Format:
Subjects:	Transistors Static relays

Similar Items

Low power n-p-n, 20 V, 300 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution

Low power n-p-n, 20 V, 300 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution

Low power n-p-n, 65 V, 600 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution

Low power n-p-n, 65 V, 600 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution

Low power p-n-p, 65 V, 500 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution

Low power p-n-p, 65 V, 500 mW switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution

Low power, 25 V, 300 mW p-n-p switching transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution

Low power n-p-n, 60 V, 600 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution

Low power n-p-n, 60 V, 600 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution

Low power p-n-p, 60 V, 500 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution

Detail specification of low noise, low paper p-n-p, 40 V, 300 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation
by: 8096 British Standards Institution

Detail specification for low power p-n-p, 60 V 500 mW amplifying transistor of assessed quality, ambient rated, hermetic encapsulation.
by: 8096 British Standards Institution

Study on Total Ionize Dose Irradiation Damages of Silicon Epitaxial Planar NPN Bipolar Transistor
by: PENG Chao;LEI Zhifeng;ZHANG Hong;ZHANG Zhangang;HE Yujuan
Published: (2022-10-01)

Theory of static converter systems : mathematical analysis and interpretation/
by: 350871 Slonim, Michael A., et al.
Published: (1984)

Power system protection : static relays/
by: 304016 Rao, T. S. Madhava
Published: (1979)

INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY
by: S. Ibrahim, et al.
Published: (2019-06-01)

Planar double-gate transistor : from technology to circuit /
by: Amara, A., et al.
Published: (2009)

General purpose switching diode of assessed quality : ambient rated, hermetic encapsulation, 20 V, 75 mA
by: 8096 British Standards Institution

GaN Transistors for Efficient Power Conversion /
by: Lidow, Alex, author, et al.
Published: (2020)

C-V characterization of N-channel and P-channel of twin silicon nanowire field effect transistor /
by: Alia Noor Fiswani Agussalim, 1994- , author, et al.
Published: (2017)

C-V characterization of N-channel and P-channel of twin silicon nanowire field effect transistor /
by: Alia Noor Fiswani Agussalim, 1994- , author
Published: (2017)

Electrical protection relays
by: 8096 British Standards Institution

Electrical protection relays
by: 8096 British Standards Institution

Electrical relays of assessed quality : generic data and methods of test
by: 8096 British Standards Institution

Electromechanical relay (all-or-nothing), enclosed plug-in construction, light and medium duty capability with continuous rating. Basic assessment
by: 8096 British Standards Institution

Design And Simulation Of Static Var Compensator For Voltage Sags Mitigation
by: Md yusof, Arshad
Published: (2002)

Silicon-germanium heterojunction bipolar transistors /
by: 190336 Cressler, John D., et al.
Published: (2003)

Simulation and characterization of silicon nanowire field effect transistor with strain effect /
by: Chau, Chok Yoa, 1993- , author, et al.
Published: (2017)

Simulation and characterization of silicon nanowire field effect transistor with strain effect /
by: Chau, Chok Yoa, 1993- , author
Published: (2017)

Effect of channel doping on silicon nanowire field effect transistor performance /
by: Raja Norasiah Raja Daud, 1989-, author, et al.
Published: (2011)

Impact of device parameter variation on the performance of n-type junctionless nanowire transistor with high-k dielectrics /
by: Mohammed Adamu Sule, 1984-, author, et al.
Published: (2019)

Impact of device parameter variation on the performance of n-type junctionless nanowire transistor with high-k dielectrics /
by: Mohammed Adamu Sule, 1984-, author, et al.
Published: (2019)

Transistor fundamentals : basic transistor circuits/
by: 329153 Pike, Charles A.
Published: (1968)

Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter
by: Myeong-Cheol Shin, et al.
Published: (2021-03-01)

GaN Vertical Transistors with Staircase Channels for High-Voltage Applications
by: Kuntal Barman, et al.
Published: (2023-01-01)

Electrical protection relays
by: 8096 British Standards Institution, et al.

Performance evaluation of silicon-on-insulator junctionless transistor based 6T and 8T sram cells /
by: Muhammad Faris Md. Noor, 1996-, author, et al.
Published: (2019)

Performance evaluation of silicon-on-insulator junctionless transistor based 6T and 8T sram cells /
by: Muhammad Faris Md. Noor, 1996-, author, et al.
Published: (2019)

Effect of channel doping on silicon nanowire field effect transistor performance [electronic resource] /
by: Raja Norasiah Raja Daud, 1989-, author
Published: (2011)

GaN transistors for efficient power conversion /
by: Lidow, Alex, author, et al.
Published: ([201)