Modeling and simulation of drain induced barrier lowering in short channel metal oxide semiconductor field effect transistor [electronic resource] /

Modeling and simulation of drain induced barrier lowering in short channel metal oxide semiconductor field effect transistor [electronic resource] /

Thesis (Sarjana Kejuruteraan (Elektrik - Elektronik dan Telekomunikasi)) - Universiti Teknologi Malaysia, 2007

Bibliographic Details
Main Author:	264557 Bambang Sudarman Osman
Format:
Language:	eng
Published:	Skudai : Universiti Teknologi Malaysia, 2007
Subjects:	Metal oxide semiconductors field-effect transistors

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