Design and characterisation of strained silicon MOSFET [electronic resource] /

Design and characterisation of strained silicon MOSFET [electronic resource] /

Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Elektronik)) - Universiti Teknologi Malaysia, 2007

Библиографические подробности
Главные авторы:	275773 Goh, Eunice Shing Mei, Fakulti Kejuruteraan Elektrik
Формат:
Опубликовано:	2007
Предметы:	Metal oxide semiconductor field-effect transistors Silicon

Схожие документы

Design and characterisation of strained silicon MOSFET /
по: 275773 Goh, Eunice Shing Mei, и др.
Опубликовано: (2007)

Design and characterisation of biaxial strained silicon N-channel MOSFET /
по: 521413 Lau, Ngei Ong, и др.
Опубликовано: (2010)

Design and characterisation of biaxial strained silicon N-channel MOSFET [electronic resource] /
по: 521413 Lau, Ngei Ong
Опубликовано: (2010)

Characterization of silicon - on - insulator (SOI) mosfet using TCAD tools [electronic resource] /
по: 247481 Yeoh, Chun Jern, и др.
Опубликовано: (2007)

Characterization of double gate silicon on insulator (SOI) MOSFET /
по: Zaharah Johari, 1985-, и др.
Опубликовано: (2008)

Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /
по: Muhamad Syahir Tumaran, 1987-, и др.
Опубликовано: (2010)

Characterization of silicon - on - insulator (SOI) mosfet using TCAD tools /
по: 247481 Yeoh, Chun Jern, и др.
Опубликовано: (2007)

Development of partially and fully depleted silicon-on-insulator MOSFET using tcad tools /
по: Teoh, Shu Wen, 1986-, и др.
Опубликовано: (2010)

The development of vertical mosfet model incorporating a dielectric pocket /
по: 227744 Nurul Ezaila Alias, и др.
Опубликовано: (2009)

The development of vertical mosfet model incorporating a dielectric pocket /
по: 227744 Nurul Ezaila Alias, и др.
Опубликовано: (2009)

The influence of corner effects in double gate vertical mosfet [electronic resource]/
по: Khalidah Abdullah, 1986-, и др.
Опубликовано: (2010)

Performance evaluation of 3-d n-chanel and p-channel twin silicon nanowire mosfet (TSNWFET) /
по: Muhammad Nurhaziq Haridan, 1993-, author, и др.
Опубликовано: (2017)

Semi - empirical capacitance modeling for mosfet /
по: 275510 Chai, Chun Vui, и др.
Опубликовано: (2008)

Performance evaluation of 3-d n-chanel and p-channel twin silicon nanowire mosfet (TSNWFET) [elecronic resource] /
по: Muhammad Nurhaziq Haridan, 1993-, author
Опубликовано: (2017)

Characterization of tri-material gate n-channel MOSFET /
по: Nadia Othman, и др.
Опубликовано: (2010)

Advanced fabrication techniques for designing nanoscale mosfet [electronic resource] /
по: 266516 Wong, Suei Huey, и др.
Опубликовано: (2007)

The influence of corner effects in double gate vertical mosfet /
по: Khalidah Abdullah, 1986-, и др.
Опубликовано: (2010)

Characterization of tri-material gate n-channel MOSFET [electronic resource] /
по: 552022 Nadia Othman
Опубликовано: (2010)

Modeling of lightly of doped drain (LDD) mosfet for circuit simulation /
по: Vijay K. Arora, и др.
Опубликовано: (2008)

Physical and chemical characterization of oxide/germanium interfaces in ge mosfet [electronic resource] /
по: Nur Shazwani Yunus, 1992-, и др.
Опубликовано: (2015)

Characterization of low power delay product MOSFET-like CNFET [electronic resource] /
по: 268738 Chuah, Yen Pin, и др.
Опубликовано: (2007)

Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor /
по: Kang, Eng Siew, 1985-, и др.
Опубликовано: (2013)

Power mosfet design /
по: 285393 Taylor, B. E.
Опубликовано: (1993)

Relliability behaviors of HCI and NBTI on 3-D planar mosfet and novel finfet/
по: Rahimah Hassan, 1992-, и др.
Опубликовано: (2016)

Mosfet modeling for circuit analysis and design /
по: 372891 Galup-Montoro, Carlos, и др.
Опубликовано: (2007)

Mosfet circuit debounces power relay /
по: 390063 Venditti, Carlo

Relliability behaviors of HCI and NBTI on 3-D planar mosfet and novel finfet [electronic resource]/
по: Rahimah Hassan, 1992-
Опубликовано: (2016)

Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor [electronic resource] /
по: Kang, Eng Siew, 1985-
Опубликовано: (2013)

Mosfet circuits guidebook-with 100 tested projects/
по: 275027 Turner, Rufus P.
Опубликовано: (1976)

Velocity field characteristics in quasi-two-dimensional (q2d) systems: application to nano-mosfet /
по: 277693 Lee, Aaron Chii Enn, и др.
Опубликовано: (2008)

Advanced fabrication techniques for designing nanoscale mosfet /
по: 266516 Wong, Suei Huey, и др.
Опубликовано: (2007)

Design and analysis of double gate vertical MOSFET (VMOSFET) comparison between source on top and drain on top /
по: 554353 Ungku Noor Yasmin Ungku Mohd. Yunus, и др.
Опубликовано: (2010)

Semi - empirical device model for nanoscale MOSFET [electronic resource] /
по: 418115 Lai, Zyn Ming, и др.
Опубликовано: (2007)

Simulation of 0.18 micron MOSFET and its characterization /
по: 398154 Syafeeza Ahmad Radzi
Опубликовано: (2005)

Design and analysis of double gate vertical MOSFET (VMOSFET) comparison between source on top and drain on top [electronic resource] /
по: 554353 Ungku Noor Yasmin Ungku Mohd. Yunus
Опубликовано: (2010)

Device and circuit-level performance of graphene nanoribbon field-effect transistor with benchmarking against a nano-mosfet /
по: Wong, Weng Soon, 1988-, author, и др.
Опубликовано: (2013)

Physical and chemical characterization of oxide/germanium interfaces in ge mosfet /
по: Nur Shazwani Yunus, 1992-, и др.
Опубликовано: (2015)

The physics and modeling of MOSFETs : surface-potential model HiSIM /
по: 240092 Miura-Mattausch, Mitiko, и др.
Опубликовано: (2008)

Effect of Germanium content on mobility enhancement of strained silicon fet /
по: Siti Nurjatikesuma Che Nan, 1992-, author, и др.
Опубликовано: (2018)

Effect of Germanium content on mobility enhancement of strained silicon fet /
по: Siti Nurjatikesuma Che Nan, 1992-, author, и др.
Опубликовано: (2018)