Design and characterisation of strained silicon MOSFET [electronic resource] /
Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Elektronik)) - Universiti Teknologi Malaysia, 2007
Главные авторы: | 275773 Goh, Eunice Shing Mei, Fakulti Kejuruteraan Elektrik |
---|---|
Формат: | |
Опубликовано: |
2007
|
Предметы: |
Схожие документы
-
Design and characterisation of strained silicon MOSFET /
по: 275773 Goh, Eunice Shing Mei, и др.
Опубликовано: (2007) -
Design and characterisation of biaxial strained silicon N-channel MOSFET /
по: 521413 Lau, Ngei Ong, и др.
Опубликовано: (2010) -
Design and characterisation of biaxial strained silicon N-channel MOSFET [electronic resource] /
по: 521413 Lau, Ngei Ong
Опубликовано: (2010) -
Characterization of silicon - on - insulator (SOI) mosfet using TCAD tools [electronic resource] /
по: 247481 Yeoh, Chun Jern, и др.
Опубликовано: (2007) -
Characterization of double gate silicon on insulator (SOI) MOSFET /
по: Zaharah Johari, 1985-, и др.
Опубликовано: (2008)