Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy [electronic resource] /

Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy [electronic resource] /

Thesis (Sarjana Sains (Fizik)) - Universiti Teknologi Malaysia, 2008

Bibliographic Details
Main Authors:	Lim, Kheng Boo, 1981-, Fakulti Sains
Format:
Language:	eng
Published:	2008
Subjects:	Semiconductors

Similar Items

Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy /
by: Lim, Kheng Boo, 1981-, et al.
Published: ( 200)

Uniform indium arsenide quantum dots formation /
by: Lim, Kheng Boo, 1981-, author, et al.
Published: (2007)

Growth and characteristics of islands and quantum dots of germanium and indium gallium arsenide /
by: Amira Saryati Ameruddin, 1985-, et al.
Published: (2010)

Indium arsenide quantum dots for single photons in the communications band
by: Steinbrecher, Gregory R
Published: (2014)

Temperature effect on the density and sizes of indium-arsenide (InAs) quantum dots /
by: Lim, Cheng Foo, 1985-, et al.
Published: (2008)

Properties of lattice-matched and strained indium gallium arsenide /
by: Bhattacharya, Pallab
Published: (1993)

Growth and characteristics of islands and quantum dots of germanium and indium gallium arsenide [electronic resource] /
by: Amira Saryati Ameruddin, 1985-
Published: (2010)

Structural and optical properties of self-assembled indium gallium arsenide quantum dots /
by: Didik Aryanto, 1983-, et al.
Published: (2009)

Growth and characteristics of islands and quantum dots of germanium and indium gallium arsenide /lcAmira Saryati Ameruddin
by: 541108 Amira Saryati Ameruddin,ld1985-, et al.

The effect of growth temperature on indium gallium arsenide (InGaAs) quantum dots grown using mocvd /
by: Hamizah Nadia Alias @ Yusof, 1988-, et al.

Continuous injection synthesis of indium arsenide quantum dots emissive in the short-wavelength infrared
by: Franke, Daniel, et al.
Published: (2017)

Structural and optical properties of self-assembled indium gallium arsenide quantum dots [electronic resource] /
by: Didik Aryanto, 1983-, et al.
Published: (2009)

Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition
by: Wu, Dan, et al.
Published: (2017)

Gallium arsenide /
by: Blakemore, John Sydney
Published: (1987)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
by: Roslan, Sharizar, et al.
Published: (2006)

Experiments in gallium arsenide technology /
by: 225814 Branning, D. J., et al.
Published: (1988)

The effect of growth time to the growth of indium gallium arsenide (InGaAs) quantum wires using MOCVD /
by: 504574 Nor Hamizah Nor Helmi,ld1989-, et al.
Published: (2010)

Gallium arsenide and related compounds /
by: 472172 International Symposium on Gallium Arsenide and Related Compounds (13th : 1986 : Las Vegas), et al.
Published: (1987)

Gallium arsenide and related compounds /
by: International Symposium on Gallium Arsenide and Related Compounds (6th, 1976 : Edinburg), et al.
Published: (1977)

Quantum dot lasers /
by: Ustinov, Victor M. (Victor Mikhailovich)
Published: (2003)

Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.
by: Gale, Ronald Paul
Published: (2007)

Feedback control of organometallic vapor-phase epitaxial growth of aluminum gallium arsenide devices
by: Warnick, Sean C. (Sean Charles)
Published: (2005)

Electronic structure simulation of gallium arsenide clusters /
by: Nor Muniroh Musa, 1982-, et al.
Published: (2009)

Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
by: Mah, Kia Woon
Published: (2008)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
by: Zulkafli Othaman, author, et al.
Published: (2007)

Gallium arsenide and related compounds 1985 /
by: International Symposium on Gallium Arsenide and Related Compounds (12th : 1985 : Karuizawa, Japan)
Published: (1986)

Gallium arsenide and related compounds : proccedings /
by: International Symposium on Gallium Arsenide and Related Compounds (6th : 1976 : St. Louis), et al.
Published: (1977)

Gallium arsenide and related compounds : proceedings
by: International Symposium on Gallium Arsenide and Related Compounds (4th : 1972 : Boulder, Colorado)
Published: (1973)

Gallium arsenide and related compounds, 1978 /
by: International Symposium on Gallium Arsenide and Related Compounds (7th : 1978 : St. Louis), et al.
Published: (1979)

Gallium arsenide and related compounds : proceedings /
by: International Symposium on Gallium Arsenide and Related Compounds, (3rd : 1970 : Aachen), et al.
Published: (1971)

Gold seed-particles assisted growth of indium gallium arsenide nanowires /
by: Edy Wibowo, 1986-, et al.
Published: (2011)

Gallium arsenide IC technology : principles and practice /
by: 231019 Sclater, Neil
Published: (1988)

Quantum dot-doped porous silicon metal–semiconductor metal photodetector
by: Hsiao, Vincent K. S., et al.
Published: (2014)

Epitaxial growth of successive CdSe ultrathin films and quantum dot layers on TiO2 nanorod arrays for photo-electrochemical cells
by: Feng, Shuanglong, et al.
Published: (2014)

Electronic structure simulation of gallium arsenide clusters [electronic resource] /
by: Nor Muniroh Musa, 1982-, et al.
Published: (2009)

Kajian sentuhan logam indium-semikonduktor silikon /
by: 409763 Rosnita Hj. Muhammad
Published: (1995)

Experimental and theoretical investigation of indium phosphide quantum dot growth mechanisms
by: Xie, Lisi, Ph. D. Massachusetts Institute of Technology
Published: (2017)

Failure analysis of gallium-arsenide metal-semiconductor field-effect-transistors overstressed with microwave signals /
by: 358556 Mohamed Nasser Darweesh
Published: (1984)

Simulation of indium arsenide (InAs) cluster by using gamess /
by: Mohd. Anis Fauzan Pisal, 1989-, et al.
Published: (2010)

Lateral alignment of epitaxial quantum dots /
by: Schmidt, Oliver G.
Published: (2007)