Plasmochemical deposition of silicon nitride films in the SiH4-Ar-N2 system studied by optical emission spectroscopy/
PSZJBL
Main Authors: | 495970 Aleksandrov, S. E., Kovalgin, A. Yu |
---|---|
Format: | |
Language: | eng |
Subjects: |
Similar Items
-
Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching
by: V. V. Emelyanov
Published: (2022-03-01) -
Controlled Carboxylic Acid-Functionalized Silicon Nitride Surfaces through Supersonic Molecular Beam Deposition
by: Marco V. Nardi, et al.
Published: (2023-07-01) -
The influence of firing parameters on the formation of nitride phases in nitride bonded silicon carbides
by: J.T. Kehren, et al.
Published: (2023-09-01) -
Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer
by: Lee, Kwang Hong, et al.
Published: (2019) -
Silicon Nitride Background in Nanophotonic Waveguide Enhanced Raman Spectroscopy
by: Ashim Dhakal, et al.
Published: (2017-02-01)