Impacts of ultrathin biaxial strained silicon on ultimate drive velocity, effective gate capacitance and threshold voltage /

Míreanna comhchosúla

• Impacts of ultrathin biaxial strained silicon on ultimate drive velocity, effective gate capacitance and threshold voltage [electronic resource] /
  de réir: Yau, Wei Heong, 1983-, et al.
  Foilsithe / Cruthaithe: (2010)
• Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs /
  de réir: Yau, Wei Heong, author, et al.
  Foilsithe / Cruthaithe: (2009)
• Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /
  de réir: Muhamad Syahir Tumaran, 1987-, et al.
  Foilsithe / Cruthaithe: (2010)
• Characterization of double gate silicon on insulator (SOI) MOSFET /
  de réir: Zaharah Johari, 1985-, et al.
  Foilsithe / Cruthaithe: (2008)
• Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy /
  de réir: Cressler, John D.
  Foilsithe / Cruthaithe: (2006)