Design and characterisation of biaxial strained silicon N-channel MOSFET /

Design and characterisation of biaxial strained silicon N-channel MOSFET /

Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Mikroelektronik)) - Universiti Teknologi Malaysia, 2010

Détails bibliographiques
Auteurs principaux:	521413 Lau, Ngei Ong, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik
Format:
Langue:	eng
Publié:	2010
Sujets:	Metal oxide semiconductor field-effect transistors Metal-oxide semiconductor field-effect transistors

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