Design and characterisation of biaxial strained silicon N-channel MOSFET [electronic resource] /

Design and characterisation of biaxial strained silicon N-channel MOSFET [electronic resource] /

Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Mikroelektronik)) - Universiti Teknologi Malaysia, 2010

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Hlavní autor: 521413 Lau, Ngei Ong
Médium:
Jazyk:eng
Vydáno: 2010
Témata:
Metal oxide semiconductor field-effect transistors
Metal-oxide semiconductor field-effect transistors

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