CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications /
This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as hig...
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Language: | eng |
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Singapore : Pan Stanford Publishing,
2013
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_version_ | 1826450790159482880 |
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author | Collaert, Nadine, editor 549747 |
author_facet | Collaert, Nadine, editor 549747 |
author_sort | Collaert, Nadine, editor 549747 |
collection | OCEAN |
description | This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET. |
first_indexed | 2024-03-05T11:59:49Z |
format | |
id | KOHA-OAI-TEST:469987 |
institution | Universiti Teknologi Malaysia - OCEAN |
language | eng |
last_indexed | 2024-03-05T11:59:49Z |
publishDate | 2013 |
publisher | Singapore : Pan Stanford Publishing, |
record_format | dspace |
spelling | KOHA-OAI-TEST:4699872022-01-09T09:04:01ZCMOS Nanoelectronics : Innovative Devices, Architectures, and Applications / Collaert, Nadine, editor 549747 Singapore : Pan Stanford Publishing,2013©2013engThis book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET.This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET.PSZJBLMetal oxide semiconductors, ComplementaryNanoelectronicsURN:ISBN:9789814364027 |
spellingShingle | Metal oxide semiconductors, Complementary Nanoelectronics Collaert, Nadine, editor 549747 CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications / |
title | CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications / |
title_full | CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications / |
title_fullStr | CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications / |
title_full_unstemmed | CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications / |
title_short | CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications / |
title_sort | cmos nanoelectronics innovative devices architectures and applications |
topic | Metal oxide semiconductors, Complementary Nanoelectronics |
work_keys_str_mv | AT collaertnadineeditor549747 cmosnanoelectronicsinnovativedevicesarchitecturesandapplications |