CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications /

This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as hig...

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Main Author: Collaert, Nadine, editor 549747
Format:
Language:eng
Published: Singapore : Pan Stanford Publishing, 2013
Subjects:
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author Collaert, Nadine, editor 549747
author_facet Collaert, Nadine, editor 549747
author_sort Collaert, Nadine, editor 549747
collection OCEAN
description This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET.
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institution Universiti Teknologi Malaysia - OCEAN
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spelling KOHA-OAI-TEST:4699872022-01-09T09:04:01ZCMOS Nanoelectronics : Innovative Devices, Architectures, and Applications / Collaert, Nadine, editor 549747 Singapore : Pan Stanford Publishing,2013©2013engThis book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET.This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET.PSZJBLMetal oxide semiconductors, ComplementaryNanoelectronicsURN:ISBN:9789814364027
spellingShingle Metal oxide semiconductors, Complementary
Nanoelectronics
Collaert, Nadine, editor 549747
CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications /
title CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications /
title_full CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications /
title_fullStr CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications /
title_full_unstemmed CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications /
title_short CMOS Nanoelectronics : Innovative Devices, Architectures, and Applications /
title_sort cmos nanoelectronics innovative devices architectures and applications
topic Metal oxide semiconductors, Complementary
Nanoelectronics
work_keys_str_mv AT collaertnadineeditor549747 cmosnanoelectronicsinnovativedevicesarchitecturesandapplications