Simulation and modeling of curved channel metal oxide semiconductor field effect transistor /
Thesis (Doktor Falsafah (Kejuruteraan Elektrik)) - Universiti Teknologi Malaysia, 2012
المؤلفون الرئيسيون: | Jatmiko Endro Suseno, 1972-, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik |
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التنسيق: | |
اللغة: | eng |
منشور في: |
2012
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الموضوعات: |
مواد مشابهة
-
Simulation and modeling of curved channel metal oxide semiconductor field effect transisto [electronic resource] /
حسب: Jatmiko Endro Suseno, 1972-
منشور في: (2012) -
Vertical channel structure and ballistic carrier transport of nanoscale metal oxide semiconductor field effect transistor /
حسب: Ismail Saad, 1974-, وآخرون
منشور في: (2009) -
Modeling of electrical, process and temperature variations in metal-oxide-semiconductor transistor mismatch /
حسب: Muhamad Amri Ismail, 1978-, وآخرون
منشور في: (2009) -
Design of nanoscale vertical impact ionization metal oxide semiconductor field effect transistor (MOSFET) for short channel effect control /
حسب: Muhammad Aiman Md. Shariff, 1988-, author, وآخرون
منشور في: (2011) -
Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor /
حسب: Kang, Eng Siew, 1985-, وآخرون
منشور في: (2013)