Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor /

Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor /

Thesis (Ph.D (Kejuruteraan Elektrik)) - Universiti Teknologi Malaysia, 2013

Détails bibliographiques
Auteurs principaux: Kang, Eng Siew, 1985-, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik
Format:
Langue:eng
Publié: 2013
Sujets:
Metal oxide semiconductor field-effect transistors

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