Integrated power devices and TCAD simulation /
"From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students a...
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| Format: | |
| Language: | eng |
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Boca Raton : Taylor & Francis,
2014
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| _version_ | 1796750905145556992 |
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| author | Fu, Yue, author Li, Zhanming, author Ng, Wai Tung, author Sin, Johnny K. O., author |
| author_facet | Fu, Yue, author Li, Zhanming, author Ng, Wai Tung, author Sin, Johnny K. O., author |
| author_sort | Fu, Yue, author |
| collection | OCEAN |
| description | "From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems. "--provided by publisher |
| first_indexed | 2024-03-05T13:58:21Z |
| format | |
| id | KOHA-OAI-TEST:509357 |
| institution | Universiti Teknologi Malaysia - OCEAN |
| language | eng |
| last_indexed | 2024-03-05T13:58:21Z |
| publishDate | 2014 |
| publisher | Boca Raton : Taylor & Francis, |
| record_format | dspace |
| spelling | KOHA-OAI-TEST:5093572020-12-19T17:18:52ZIntegrated power devices and TCAD simulation / Fu, Yue, author Li, Zhanming, author Ng, Wai Tung, author Sin, Johnny K. O., author Boca Raton : Taylor & Francis,2014eng"From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems. "--provided by publisherIncludes bibliographical references (pages 323-330) and index"From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems. "--provided by publisherPSZJBLThree-dimensional imaging Power semiconductorsURN:ISBN:9781466583818 |
| spellingShingle | Three-dimensional imaging Power semiconductors Fu, Yue, author Li, Zhanming, author Ng, Wai Tung, author Sin, Johnny K. O., author Integrated power devices and TCAD simulation / |
| title | Integrated power devices and TCAD simulation / |
| title_full | Integrated power devices and TCAD simulation / |
| title_fullStr | Integrated power devices and TCAD simulation / |
| title_full_unstemmed | Integrated power devices and TCAD simulation / |
| title_short | Integrated power devices and TCAD simulation / |
| title_sort | integrated power devices and tcad simulation |
| topic | Three-dimensional imaging Power semiconductors |
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