Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation /
Thesis (Sarjana Sains (Fizik)) - Universiti Teknologi Malaysia, 2014
| Main Authors: | , , , |
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| Format: | |
| Language: | eng |
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Johor Bahru, Johor : Universiti Teknologi Malaysia,
2014
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| Subjects: |
| _version_ | 1826460007861846016 |
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| author | Siti Norsheila Zahari, 1989- , author Hazri Bakhtiar, supervisor Wan Muhamad Saridan Wan Hassan, supervisor Fakulti Sains |
| author_facet | Siti Norsheila Zahari, 1989- , author Hazri Bakhtiar, supervisor Wan Muhamad Saridan Wan Hassan, supervisor Fakulti Sains |
| author_sort | Siti Norsheila Zahari, 1989- , author |
| collection | OCEAN |
| description | Thesis (Sarjana Sains (Fizik)) - Universiti Teknologi Malaysia, 2014 |
| first_indexed | 2024-03-05T14:14:56Z |
| format | |
| id | KOHA-OAI-TEST:514778 |
| institution | Universiti Teknologi Malaysia - OCEAN |
| language | eng |
| last_indexed | 2024-03-05T14:14:56Z |
| publishDate | 2014 |
| publisher | Johor Bahru, Johor : Universiti Teknologi Malaysia, |
| record_format | dspace |
| spelling | KOHA-OAI-TEST:5147782020-12-19T17:19:07ZChannel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation / Siti Norsheila Zahari, 1989- , author Hazri Bakhtiar, supervisor Wan Muhamad Saridan Wan Hassan, supervisor Fakulti Sains Johor Bahru, Johor : Universiti Teknologi Malaysia, 2014engThesis (Sarjana Sains (Fizik)) - Universiti Teknologi Malaysia, 2014Bibliography: p. 70-72.SPSL Gamma raysMetal oxide semiconductor field-effect transistors |
| spellingShingle | Gamma rays Metal oxide semiconductor field-effect transistors Siti Norsheila Zahari, 1989- , author Hazri Bakhtiar, supervisor Wan Muhamad Saridan Wan Hassan, supervisor Fakulti Sains Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation / |
| title | Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation / |
| title_full | Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation / |
| title_fullStr | Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation / |
| title_full_unstemmed | Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation / |
| title_short | Channel length effects on the characteristic of submicron nLDD-mosfet exposed to gamma radiation / |
| title_sort | channel length effects on the characteristic of submicron nldd mosfet exposed to gamma radiation |
| topic | Gamma rays Metal oxide semiconductor field-effect transistors |
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